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机构地区:[1]长春理工大学高功率半导体激光器国家重点实验室,吉林长春130022
出 处:《激光与光电子学进展》2017年第12期82-88,共7页Laser & Optoelectronics Progress
基 金:长春理工大学青年科学基金(XQNJJ-2015-10);长春理工大学科技创新基金(XJJLG-2016-07);吉林省科技计划重点项目(20150204068GX)
摘 要:分布反馈式(DFB)半导体激光器具有优良的稳定性和单模性,广泛应用于激光器抽运和光通信等领域。光栅作为DFB激光器的关键部件,对激光器性能有重要的影响。针对976nm波段设计制备了DFB激光器的光栅。基于耦合模理论优化设计光栅的结构参数,采用激光干涉光刻和反应耦合等离子体(ICP)刻蚀技术制备光栅。通过引入表面镀膜SiO2的方法提高了光栅图形由光刻胶向衬底转移的保真度,显著地改善了光栅的图形质量。探究了曝光时间、ICP刻蚀时间对光栅表面形貌的影响。实验结果表明,所制备的光栅条纹分布均匀,有较好的表面形貌,满足预期设计目标。The distributed feedback (DFB) laser, featured in its stability and single-mode emission, is widely used in various domains such as pumping lasers and optical communications. As a key component in the DFB laser, the grating plays an important role in laser performance. The design and fabrication of the grating for the 976 nm DFB semiconductor laser are presented. The experiment starts with the optimization of the grating structure parameters based on the coupled mode theory. The gratings are fabrieated through laser interference lithography and inductively coupled plasma (ICP) etching technique. The pattern quality of the fabricated grating is improved by the introduction of surface coating SiO2, and the fidelity of grating pattern transfer from photoresist to substrate is improved as well. Influence of exposure time and ICP etching time on grating surface morphology is investigated. The experiments show that the fabricated grating has uniformly distributed fringes and better surface morphology, and the expected design is realized.
分 类 号:TN248.4[电子电信—物理电子学]
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