总剂量辐照与热载流子协同效应特性分析  

The Characteristic Analysis of Cooperative Effect of Total Dose Irradiation and Hot Carrier

作　　者：付兴中 何玉娟[2] 郑婕 章晓文[2] 

机构地区：[1]中国电子科技集团公司第五十四研究所,河北石家庄050000 [2]工业和信息化部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2017年第6期12-15,共4页Electronic Product Reliability and Environmental Testing

基　　金：国家自然科学基金项目(批准号:61574048;61204112);广东省科技重大专项(2015B090912002;2015B090901048)资助

摘　　要：研究了总剂量辐照效应对0.35μm的NMOS器件热载流子测试的影响,结果发现:经过100 krad(Si)总剂量辐照的NMOS器件在热载流子测试时其阈值电压的变化量远远地大于未经辐照的器件的,其原因与总剂量辐照退火效应和辐射感生界面陷阱俘获热电子有关。The effect of total dose irradiation on the hot carrier test of 0.35 μm NMOS device is studied. It is found that the variation in the threshold voltage of the NMOS device during hot carrier test after the 100 krad （Si） total dose irradiation is much larger than that of the non- irradiated device, and the reason is related to the total dose irradiation annealing effect and the phenomenon the radiation induced interface trap captures thermal electrons.

关 键 词：总剂量辐照 热载流子效应 协同效应 

分 类 号：TN386.1[电子电信—物理电子学]