不同选点方案下硅单晶薄层径向电阻率变化  

Radial Resistivity of Silicon Single Crystal Layer under Different Selection

作　　者：李万策 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2017年第6期24-27,69,共5页Equipment for Electronic Products Manufacturing

摘　　要：影响半导器件生产的的因素有很多,而硅单晶电阻率不均匀性就是众多衡量硅材料质量参数中的一个。电阻率对后道加工器件的稳定和重复性,甚至器件的质量参数指标都有很大的关联。硅单晶电阻率均匀性的指标要求也随着半导体器件的加工日益精细化,因此,从国标中径向电阻率几种不同的选点方案入手分析几种方式的异同。There are many factors that affect the production of semi-conductor devices, and silicon single crystal resistivity heterogeneity is a measure of silicon material quality parameters. The resistivity has a great correlation with ,the stability and repeatability of the post-processing device, and even the quality parameters of the device. Silicon single crystal resistivity uniformity of the index requirements also with the semi-conductor device processing increasingly refined more and more high, this paper from the national standard in the radial resistivity of several different options to start the analysis of several ways similarities and differences.

关 键 词：硅单晶 径向电阻率 四探针 不均匀性 

分 类 号：TN307[电子电信—物理电子学]