退火对MBE生长GaAs_(0.91)Sb_(0.09)晶体质量和发光特性影响研究  

The influence of annealing on crystal quality and luminescence properties of GaAs_(0.91)Sb_(0.09) grown by MBE

作　　者：贾慧民 王彪[2] 高虹一 王登魁 唐吉龙 冯源 李洋 李再金 马晓辉 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022 [2]中国科学院长春光学精密机械与物理研究所,长春130033

出　　处：《中国科技论文》2017年第22期2616-2620,共5页China Sciencepaper

基　　金：国家自然科学基金资助项目(61404009;61474010;61574022;61504012;61674021;11404219;11404161;11574130;11674038);国家重点研发计划项目(2017YFB0405303);吉林省科技发展计划资助项目(20160519007JH;20160101255JC;20160520117JH;20160204074GX;20160203015GX;20170520117JH)

摘　　要：为了研究慢速热退火处理对分子束外延生长(MBE)的GaAs_(0.91)Sb_(0.09)材料晶体质量和发光特性的影响,分别利用XRD及变温光致发光谱对晶体质量及发光特性进行了表征分析。对40K时GaAs_(0.91)Sb_(0.09)合金光致发光谱进行分峰拟合,获得3种样品的局域能深度分别为26、31和35 meV。结果表明:退火处理使合金中As、Sb组分互扩散,合金局域能加深,但退火使GaAs_(0.91)Sb_(0.09)局域态发光比例降低,带边发光的比例提高。To study the effect of slow thermal annealing treatment on the crystal quality and the luminescence properties of GaAs_(0.91)Sb_(0.09) grown by molecular beam epitaxy(MBE),the XRD and variable temperature photoluminescence(PL)spectra have been used to characterize the crystal quality and luminescence properties.By deconvolution of 40 KPL spectra,and the local energy for three GaAs_(0.91)Sb_(0.09) samples were 26,31,and 35 meV,respectively.The results that the As and Sb components of the alloy were interdiffed after annealing treatment,and the local energy of the alloy was deepened at the same time.However,the proportion of local state light emission of GaAs_(0.91)Sb_(0.09) was decreased and the ratio of the edge emission was increased by annealing.

关 键 词：GaAs0.91Sb0.09 分子束外延 热退火 光致发光 局域态 

分 类 号：O78[理学—晶体学] TG156.2[金属学及工艺—热处理]