InAs/GaSb Ⅱ类超晶格长波红外探测器的实时γ辐照效应  

Real-time γ irradiation effects on long-wavelength InAs/GaSb Type Ⅱ superlattice infrared detector

作　　者：靳川[1,2] 许佳佳 黄爱波[1] 徐志成[1] 周易[1] 白治中[1] 王芳芳[1] 陈建新[1] 陈洪雷[1] 丁瑞军[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2017年第6期688-693,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金项目(61505237;61176082;61290302;61534006);国家重点研发计划项目(2016YFB0402403);上海市自然科学基金项目(15ZR1445600;16ZR1447900)~~

摘　　要：研究了InAs/GaSb Ⅱ类超晶格长波探测器的γ辐照效应.在^(60)Co源γ辐照下器件的电流—电压(I-V)特性并未随辐照剂量的增大而发生显著的变化,100 krad(Si)辐照剂量下的零偏阻抗相较辐照前的减小率仅为3.4%,表明该探测器具有很好的抗辐照性能.结合不同辐照剂量下的实时I-V特性曲线和辐照停止后器件电流随时间的演化情况,对辐照所带来的器件性能的损伤以及微观损伤机理进行了分析.发现零偏压和小反向偏压下,辐照开始后电流即有明显增大,辐照损伤以暂态的电离效应为主导,器件性能可以在很短时间内恢复.而大反向偏压下器件暗电流的主导机制为直接隧穿电流,辐照所引入位移效应的影响使得暗电流随辐照剂量增大而减小,损伤需通过退火效应缓慢恢复,弛豫时间明显长于电离效应损伤.In this paper,the γ-irradiation effect on InAs/GaSb Ⅱ superlattice long-wave detectors was studied. The detector has a good anti-radiation performance under the irradiation of ^60Co γ-rays as the current-voltage（ I-V） characteristics of the devices did not change significantly with the increase of the irradiation dose. Compared with the value before irradiation,the reduction rate of the zero-bias resistance was only 3. 4% under the irradiation dose of 100 krad（ Si）. By combining the real-time I-V curves at different irradiation doses and the evolution of the current with time after the irradiation,the damage and the corresponding mechanism of the γ-irradiation were analyzed. At zero bias as well as small reverse bias,the current is obviously increased after irradiation. The radiation damage is dominated by the transient ionization effect,and the device performance can be recovered in a short time.While at large reverse bias,the main dark current mechanism is the direct tunneling current,leading to a decreased dark current with the increase of the irradiation dose. The time of the damage recovery is significantly longer than that of the ionization damage,and an annealing may be required.

关 键 词：Γ辐照 实时辐照效应 长波红外探测器 INAS/GASB Ⅱ类超晶格 

分 类 号：TN21[电子电信—物理电子学]