L波段GaN大功率高效率准单片功率放大器  

An L-band GaN High-power and High-efficiency Quasi-MMIC Power Amplifier

作　　者：蔺兰峰[1] 周衍芳 黎明 陶洪琪[1] 

机构地区：[1]单片集成电路与模块国家重点实验室,南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2017年第6期384-388,共5页Research & Progress of SSE

摘　　要：研制了一款基于NEDI 0.25μm GaN功率MMIC工艺的L波段大功率高效率准单片功率放大器。采用两级拓扑结构,以准单片形式实现。输入采用有耗匹配网络提高芯片的稳定性,级间和末级匹配均采用无耗纯电抗网络,其中末级匹配电路通过低损耗陶瓷电路实现。合理规划前级与末级间推动比,降低前级漏电流,减小末级匹配损耗,优化谐波匹配,实现大功率高效率设计。芯片在28V脉冲电压下工作,在1.2~1.4GHz范围内,实测输出功率大于49dBm,功率增益大于25dB,功率附加效率达到73%。管芯部分及输入匹配电路采用GaN功率MMIC工艺制作,输出匹配电路采用低损耗陶瓷片介质加工,两块电路键合一起总面积8.0mm×5.6mm。An L-band high-power and high-efficiency quasi-MMIC power amplifier was developed based on the technology of 0.25 um GaN power MMIC using two-stage structure.A dissipative network for the input-matching circuit was used to improve the stability,and lossless network was designed for inter-stage matching circuit and output matching circuit among which a low loss ceramic circuit was used.In order to achieve high power with high efficiency,the driving ratio between the two stages and,harmonic matching network were optimized,and the loss of output matching circuit and the current of driving-stage were reduced.The amplifier operated in pulse mode.An output power over 49 dBm with a power gain over 25 dB and a max value of power added efficiency at 73% were achieved at 1.2-1.4 GHz at a drain voltage of 28 V.The devices and the input matching circuit were fabricated by GaN power MMIC technology,and the rest of the circuit including the output matching circuit were fabricated by low-loss ceramic circuit technology.The overall size of the quasi-MMIC amplifier including bonding is 8.0 mm×5.6 mm.

关 键 词：GAN L波段 高效率 大功率 准单片 

分 类 号：TN722.75[电子电信—电路与系统] TN492