2000W硅LDMOS微波脉冲大功率晶体管  

Development of 2 000W Silicon LDMOS Microwave Power Transistor

作　　者：应贤炜[1] 王佃利[1] 李相光[1] 梅海[1] 吕勇[1] 刘洪军[1] 严德圣[1] 杨立杰[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2017年第6期401-405,共5页Research & Progress of SSE

摘　　要：针对雷达、等离子体射频源、广播通信等领域对LDMOS大功率器件的迫切需求,通过热仿真优化了芯片版图布局,通过芯片级Load-pull仿真优化了芯片结构,成功开发了50V千瓦级硅LDMOS功率管。该器件耐压大于140V,在50V工作电压、230MHz工作频率、100μs脉宽、20%占空比、18W输入功率的测试条件下,输出功率大于2 000 W,增益大于20.4dB,漏极效率大于66.2%,抗失配通过10∶1。Aiming at the urgent need of LDMOS power devices for the application of radar,plasma exciter,broadcast communication,a 50 V,-kW Si LDMOS has been developed in this paper.The chip layout was optimized with thermal simulation,and the chip structure was optimized with chip-level load-pull simulation.The device has a breakdown voltage more than 140 V.Under the test condition of 50 Vsupply voltage,230 MHz operating frequency,100μs pulse width and 20% duty cycle,the fabricated device shows an output power over 2000 W,apower gain of 20.4 dB and a drain efficiency of 66.2%.It can handle VSWR10∶1 at all phase angles.

关 键 词：硅横向扩散金属-氧化物-半导体 千瓦 微波功率晶体管 

分 类 号：TN385[电子电信—物理电子学] TN386.1