FRD局域寿命控制技术的仿真研究  

Simulation Study on FRD Local Life Control Technology

作　　者：闫娜 关艳霞[1] 宫兴 

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁110870

出　　处：《集成电路应用》2018年第2期29-32,共4页Application of IC

基　　金：全国大学生集成电路设计应用创新项目资助

摘　　要：传统的快恢复二极管,为了缩短反向恢复时间,通常采用电子辐照来减小基区的少子寿命,但电子辐照在降低器件的反向恢复时间的同时,也使得其通态压降增大。本文采用双质子辐照的局域寿命控制的方法,利用SILVACO软件对二极管特性进行仿真研究,讨论局域低寿命区在二极管中的不同位置,对快恢复二极管的反向恢复电流,反向恢复软度因子,以及通态压降的影响,为快恢复二极管的实际生产提供理论依据。In order to shorten the reverse recovery time, the conventional fast recovery diode usually uses electron irradiation to reduce the minority carrier lifetime in the base region. Although the electron irradiation can reduce the reverse recovery time of the device ,it also makes the on-state voltage drop increase. In this paper, we use the method of local lifetime control of double proton irradiation to simulate the diode with SILVACO software, discuss the different locations of the local low lifetime region in the diode and analyze the influence of the local low lifetime region in the diode on the reverse recovery current , reverse recovery softness factor, and the on-state voltage drop of the fast recovery diode, providing the theoretical basis for the actual production of fast recovery diode.

关 键 词：快恢复二极管 双质子辐照 反向恢复软度因子 反向恢复时间 

分 类 号：TN402[电子电信—微电子学与固体电子学]