基于SiO_2薄膜的915nm半导体激光器的无杂质空位诱导量子阱混合研究  

Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915nm Semiconductor Laser Based on SiO_2 Film

作　　者：王鑫[1,2] 赵懿昊 朱凌妮[1] 侯继达[1,2] 马骁宇 刘素平[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学,北京100049

出　　处：《光子学报》2018年第3期94-100,共7页Acta Photonica Sinica

基　　金：国家自然科学基金(No.61306057)资助~~

摘　　要：为了提高915nm半导体激光器腔面抗光学灾变的能力,采用基于SiO_2薄膜无杂质诱导量子阱混合法制备符合915nm半导体激光器AlGaInAs单量子阱的非吸收窗口.研究了无杂质空位诱导量子阱混合理论及不同退火温度、不同退火时间、SiO_2薄膜厚度、SiO_2薄膜折射率、不同盖片等试验参数对制备非吸窗口的影响,并且讨论了SiO_2薄膜介质膜的多孔性对无杂质诱导量子阱混合的影响.实验制备出蓝移波长为53nm的非吸收窗口,最佳制备非吸收窗口条件为退火温度为875℃,退火时间为90s,SiO_2薄膜折射率为1.447,厚度为200nm,使用GaAs盖片.The non-absorbing window is adopted in the 915 nm semiconductor laser to improve the catastrophic optical damage level of the device.The non-absorbing window is fabricated by impurity free vacancy diffusion induces quantum well intermixing based on SiO2 thin film technology.The theory of the impurity free vacancy diffusion induces quantum well intermixing will be systematic researching.And the different experimental conditions such as the annealing temperature,the thickness of SiO2 thin film,the refractive index of SiO2 film and the cover gaps are evaluated in the paper.And the mechanism is discussed for the effect of the porosity SiO2 film dielectric film in the impurity free vacancy diffusion induces quantum well intermixing.Ultimately the experiment results show that a luminescence blue shift53 nm is obtained from the sample The optimal experimental conditions are annealing at 875℃ for 90 s,and the thickness of the SiO2 thin film is 200 nm with the refractive index is 1.447,choosing GaAs cap piece to be the cover gap.

关 键 词：半导体激光器 光学灾变 量子阱混杂 非吸收窗口 薄膜 

分 类 号：O436[机械工程—光学工程]