f_T为350 GHz的InAlN/GaN HFET高频器件研究（英文）  

High-frequency InAlN/GaN HFET with an f_T of 350 GHz

作　　者：付兴昌 吕元杰[3] 张力江 张彤 李献杰[2] 宋旭波[2] 张志荣[2] 房玉龙[3] 冯志红[3] 

机构地区：[1]信息显示与可视化国际合作联合实验室电子科学与工程学院东南大学,江苏南京210096 [2]河北半导体研究所,河北石家庄050051 [3]专用集成电路国家级重点实验室,河北石家庄050051

出　　处：《红外与毫米波学报》2018年第1期15-19,共5页Journal of Infrared and Millimeter Waves

摘　　要：采用再生长n^+GaN非合金欧姆接触工艺研制了具有高电流增益截止频率(f_T)的InAlN/GaN异质结场效应晶体管(HFETs),器件尺寸得到有效缩小,源漏间距减小至600 nm.通过优化干法刻蚀和n^+GaN外延工艺,欧姆接触总电阻值达到0.16Ω·mm,该值为目前金属有机化学气相沉积(MOCVD)方法制备的最低值.采用自对准电子束曝光工艺实现34 nm直栅.器件尺寸的缩小以及欧姆接触的改善,器件电学特性,尤其是射频特性得到大幅提升.器件的开态电阻(R_(on))仅为0.41Ω·mm,栅压1 V下,漏源饱和电流达到2.14 A/mm.此外,器件的电流增益截止频率(f_T)达到350 GHz,该值为目前GaN基HFET器件国内报道最高值.Scaled InAlN/GaN heterostructure field-effect transistors （HFETs） with high unity current gain cut-off frequency （fT） were realized by employing nonalloyed regrown n ＋ -GaN Ohmic contacts, in which the source-to- drain distance （Lsd） was scaled to 600 nm. By processing optimization of dry etching and n ＋ -GaN regrowth, a low total Ohmic resistance of 0.16Ω· mm is obtained, which is a recorded value regrown by metal organic chemi- cal vapor deposition （MOCVD）. A 34 nm rectangular gate was fabricated by self-aligned-gate technology. The electrical characteristics of the devices, especially for the RF characteristics, were improved greatly after the reduction of ohmic resistance and gate length. The fabricated InAIN/GaN HFETs show a low on resistance （ Ron ） of 0. 41 Ω· mm and a high drain saturation current density of 2.14 A/mm at Vgs = 1 V. Most of all, the device shows a high fT of 350 GHz, which is a recorded result reported for GaN-based HFETs in domestic.

关 键 词：铟铝氮氮化镓异质结 异质结场效应晶体管 电流增益截止频率 非合金欧姆接触工艺 纳米栅 

分 类 号：TN385[电子电信—物理电子学]