GZO/Al复合背电极对非晶硅太阳能电池的影响  

Influence of GZO/Al Composite Back Reflectors on the Performance of a-Si Solar Cells

作　　者：杨浩志 李治玥 辛艳青[2] 徐涛[2] 宋淑梅[2] 孙珲 

机构地区：[1]山东大学(威海)超级计算中心,威海264209 [2]山东大学空间科学与物理学院,威海264209

出　　处：《人工晶体学报》2018年第2期267-272,291,共7页Journal of Synthetic Crystals

基　　金：山东省科技攻关课题(2014GGX102022)

摘　　要：随着能源紧缺与环境污染问题的日益严重,太阳能的开发利用越来越受到重视,其中非晶硅薄膜太阳能电池由于其制备工艺简单、价格低廉等优点被广泛地研究。为了使非晶硅薄膜太阳能电池得到更好地利用,提高其转换效率和稳定性显得尤为重要。引入复合背电极是提高非晶硅太阳能电池性能的有效手段,其中对GZO/Al复合背电极的研究还未见报道。在该工作中,利用磁控溅射法在非晶硅电池上制备了GZO/Al复合背电极,研究了复合背电极的制备条件及其对非晶硅太阳能电池性能的影响。结果显示,当GZO层的溅射功率为90 W、Al层的溅射功率为90 W时,具有复合背电极的太阳能电池表现出较好的光电转换性能,其短路电流(I_(SC))、开路电压(V_(OC))、填充因子(FF)和电池的光电转换效率(η)分别为8.92 m A、1.55 V、54.48%和7.53%。相较于单层Al背电极的太阳能电池,其光电转换效率大幅提高了47.6%(相对效率)。As the energy shortage and environmental pollution become serious, the development and utilization of solar energy have been attracted more and more attention. Especially, the amorphous silicon （a-Si） thin film solar cells, with simple manufactural process and low cost, have been widely studied recently. In order to enhance the performance of a-Si thin film solar cells, it is imperative to improve their conversion efficiency and their stability. Among various approaches, fabrication of multilayer back reflector is an effective mean. However, the research on GZO/Al back reflector has never been reported to date. In this work, GZO/Al back reflectors were prepared by magnetron sputtering on a-Si thin film solar cells. The influence of the GZO/Al back reflector on the performance of solar cells were investigated. The results show that, in experimental conditions, when the sputtering powers of GZO target and Al target are 90 W and 90 W, the solar cell with GZO/Al back reflector present optimal performance with respect to the solar cell with monolayer Al reflector. The short-circuit current （Isc）, open circuit voltage （ Voc ）, fill factor （FF） and conversion efficiency （7/） are 8.92 mA, 1.55 V, 54.48% and 7. 53%, respectively. Compared with the solar cell with single Al reflector, the photoelectric conversion efficiency of the solar cell with GZO/Al back reflector significantly increased by 47.6%.

关 键 词：复合背电极 非晶硅太阳能电池 GZO 磁控溅射 

分 类 号：TN36[电子电信—物理电子学]