6500 V 15 A 4H-SiC JBS二极管的研制  

Development of a 6500V 15A 4H-SiC JBS diode

作　　者：薛爱杰[1] 黄润华[1] 柏松[1] 刘奥[1] 栗锐[1] 

机构地区：[1]南京电子器件研究所宽禁带半导体电力电子器件国家重点实验室

出　　处：《微纳电子技术》2018年第3期161-165,177,共6页Micronanoelectronic Technology

摘　　要：基于有限元仿真的方法对6 500 V15 A4H-SiC肖特基二极管开展了材料结构、有源区结型势垒肖特基（JBS）结构和终端保护结构的优化设计。基于4英寸（1英寸=2.54 cm）n型4H-SiC导电衬底,采用厚度为55μm、杂质浓度为9×1014 cm-3的外延材料、48个宽度为3.0μm浮空场限环实现了一款反向击穿电压大于6 500 V的4H-SiC JBS二极管。电特性测试结果表明,室温下正向电流为15 A时,正向电压为2.9 V,开启电压为1.3 V;150℃下正向电流为15 A时,正向电压为5.2 V,开启电压为1.2 V。Using the finite element simulation method,the material structure,junction barrier Schottky（JBS）structure of active region and termination protection structure for a 6 500 V15 A4 H-SiC JBS diode were optimized and designed.Based on the 4-inch（1 inch=2.54 cm）n-type4 H-SiC conductive substrate,the 4 H-SiC JBS diode with the reverse breakdown voltage higher than 6 500 V was fabricated by using the epitaxial material with the thickness of 55μm,the impurity concentration of 9×1014 cm^（-3） and 48 floating guard rings with the width of 3.0μm.The electrical characteristics test results show that when the forward current is 15 A at room temperature,the forward voltage is 2.9 V and the threshold voltage is 1.3 V;when the forward current is 15 A at 150 ℃,the forward voltage is 5.2 V and the threshold voltage is 1.2 V.

关 键 词：4H-SIC 结型势垒肖特基(JBS)二极管 结终端技术 浮空场限环 4英寸外延 

分 类 号：TN311.7[电子电信—物理电子学] TN304.24