10 Gbit/s台面型InGaAs/InP pin高速光电探测器  

10 Gbit/s Mesa InGaAs/InP pin High Speed Photodetector

作　　者：李庆伟[1] 李伟 齐利芳[1] 尹顺政[1] 张世祖[1] Li Qingwei1, Li Wei2, Qi Lifang1, Yin Shunzheng1 , Zhang Shizu 1(1. The 13th Research Institute, CETC, Shijiazhuang 050051, China; 2. Military Representative Office of PLA Air Force Stationed in Shifiazhuang Region, Shifiazhuang 050081, Chin)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]空军驻石家庄地区军事代表室,石家庄050081

出　　处：《半导体技术》2018年第4期280-284,共5页Semiconductor Technology

摘　　要：利用数值计算方法分析了高速光电探测器的耗尽区宽度与响应度及响应速度的关系。分析结果表明,耗尽区宽度选择应在响应度和响应速度之间折中,在响应度满足使用要求的情况下,尽量提高响应速度。利用该分析结果设计了台面型In GaAs/InP pin高速光电探测器材料结构。通过优化腐蚀工艺与钝化工艺,解决了器件腐蚀形貌和钝化问题。结合其他微细加工工艺完成了器件的制备,器件光敏区直径50μm。测试结果显示,在反向偏压为5 V时,暗电流小于1 nA,电容约为0.21 p F。此外,在1 310 nm激光辐照下,器件的响应度约为0.95 A/W,-3 dB带宽超过10 GHz,其性能满足10 Gbit/s光纤通信应用要求。The relationship between the width of the depletion region,the responsivity and the response speed of the high speed photodetector was analyzed by the numerical calculation method. The analysis results show that the selection of the depletion region width should compromise between the responsivity and response speed,which means increasing the response speed as much as possible in the case of meeting the use requirement of responsivity. The material structure of the mesa In GaAs/InP pin high speed photodetector was designed based on the analysis result. The corrosion morphology and passivation problems of the device were solved by optimizing the corrosion process and passivation process. The fabrication of the device was completed by combining with other microfabrication processes,and the diameter of the photosensitive surface is 50 μm. The test results show that the dark current is less than 1 n A and the capacitance is about 0. 21 p F when the reverse bias is 5 V. In addition,the responsivity of the device is about 0. 95 A/W and the -3 dB bandwidth is more than 10 GHz under the 1 310 nm laser irradiation. The performance of the device can meet the requirements of 10 Gbit/s fiber optic communication applications.

关 键 词：光电探测器 INGAAS/INP 响应度 响应速度 台面腐蚀 

分 类 号：TN364.2[电子电信—物理电子学]