本征缺陷对ZnO:(In,N)薄膜p型导电的影响  

Effect of intrinsic defects on p-type conductivity of ZnO:(In, N) thin films

作　　者：谭蜜 孔春阳[1] 李万俊[1] 秦国平[1] 张红[1,2] 阮海波 王冬 王江 TAN Mi1, KONG ChunYang1, LI WanJun1, QIN GuoPing1, ZHANG Hong1,2, RUAN HaiBo3, WANG Dong1 ,WANG Jiang1(1. Chongqing Key Laboratory of Optoelectronic Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China; 2. College of Physics, Chongqing University, Chongqing 400030, China; 3. New Materials Technology Research Institute, Chongqing University of Arts and Sciences, Chongqing 402160, Chin)

机构地区：[1]重庆师范大学物理与电子工程学院重庆市光电功能材料重点实验室,重庆400047 [2]重庆大学物理学院,重庆400030 [3]重庆文理学院新材料技术研究院,重庆402160

出　　处：《中国科学：物理学、力学、天文学》2018年第4期94-101,共8页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金(批准号:51472038;11647099);重庆市自然科学基金(批准号:cstc2016jcyj A0390);重庆教育委员会科学技术研究项目(批准号:KJ1500319;KJ1600314)资助

摘　　要：采用射频磁控溅射和离子注入技术,在石英玻璃衬底上制备了In-N共掺ZnO薄膜[ZnO:(In,N)].通过优化退火工艺,成功实现了可重复的p型ZnO:(In,N)薄膜,其空穴浓度约为10^(16)cm^(-3),并观察到薄膜随退火产生n→p→n电学转变现象.利用X射线衍射(XRD)、X射线光电子能谱(XPS)、拉曼光谱(Raman)和光致发光谱(PL)等测试手段,研究了掺杂杂质和本征缺陷对薄膜结构和p型导电的影响.发现相较于n型样品,p型ZnO中N相关受主缺陷浓度并不占优,但其本征施主缺陷锌间隙(Zn_i)含量较少,本征受主缺陷氧间隙(O_i)和锌空位(V_(Zn))相对较多.表明薄膜中除N相关受主缺陷(N_O,In_(Zn)-nN_O)对p型导电有贡献之外,本征缺陷(V_(Zn),O_i,Zn_i)对实现薄膜p型导电也有重要作用.因此,如何调控ZnO中本征缺陷是实现其p型转变以及获得稳定p-ZnO薄膜的重要手段.Indium and nitrogen co-doped ZnO thin films [ZnO：（In,N）] were prepared on quartz glass substrate by radio frequency magnetron sputtering combined with ion implantation technique. By optimizing the annealing temperature, a repeatable p-type ZnO：（In,N） thin film with the hole concentration about 10^（16） cm^（-3） was successfully achieved. Using the Hall effect measurements, the n→p→n electrical transition phenomenon of the films with annealing temperature was observed.Then the effects of doped impurities and intrinsic defects on the structure and p-type conductivity of the films were investigated by X-ray diffraction（XRD）, X-ray photoelectron spectroscopy（XPS）, Raman spectroscopy and photoluminescence（PL） spectroscopy. It was found that the difference of N-related acceptor defects concentration between p-type and n-type ZnO is not prominent. Nevertheless, the content of intrinsic zinc interstitial（Zni） donor defects in p-type ZnO were less than that of n-type one, the intrinsic oxygen interstitial（Oi） and zinc vacancy（V（Zn））acceptor defects were relatively abundant. The conclusion can be drawn that besides the N-related acceptor defects（NO,In（Zn）-nNO）, the intrinsic defects（V（Zn）, Oi, Zni） in the film also play a crucial role in realizing the p-type conductivity.Therefore, how to control the intrinsic defects in ZnO is an important means to realize the p-type transition and to improve p-type conductivity stability of ZnO thin film.

关 键 词：P型ZNO 本征缺陷 X射线光电子能谱 RAMAN 光致发光谱 

分 类 号：O484[理学—固体物理]