InGaN/GaN多量子阱绿光发光二极管内量子效率研究进展  

Research Progress of Internal Quantum Efficiency of Multi Quantum Well Green Light Emitting Diode

作　　者：郭志民 GUO Zhimin(Aluminium Corporation of China, Beijing 100062, China;National Information Center of Lighting Industry, Beijing 100022, China)

机构地区：[1]中国铝业集团有限公司,北京100062 [2]国家轻工业照明电器信息中心,北京100022

出　　处：《中国照明电器》2018年第3期6-10,共5页China Light & Lighting

摘　　要：氮化镓基发光二极管(LED)具有绿色环保、节能降耗以及寿命长等优点,广泛应用在半导体照明、户外显示及可见光通信等领域。绿光LED有源区的In组分很高,会导致更高的缺陷密度和更大的极化电场,因此其内量子效率还不到蓝光LED的一半,是三基色照明急需解决的难点。本文对目前提升In Ga N/Ga N多量子阱绿光LED的关键技术和主要进展进行了综述。通过P型层生长工艺优化、变温量子阱及复合缓冲层等技术改善量子阱晶体质量,通过阶梯量子阱结构和半极性In Ga N量子阱生长技术来降低极化电场强度,最终提高绿光LED的内量子效率。Gallium nitride based light-emitting diode （LED） has the advantages of environmental protection, energy saving and long life, was widely used in the fields of semiconductor lighting, outdoor display, visible light communication and so on. The high In component of green LED active area will lead to higher defect density and larger polarization electric field, so the quantum efficiency of it is less than half of that of blue light LED. It is the urgent problem for three primary color lighting to solve. In this paper, the key technologies and major advances in improving the InGaN/GaN multi quantum well green light LED were reviewed. The quality of QW crystal is improved by P layer temperature changing growth process optimization, quantum well and composite buffer layer technology. The polarization electric field intensity is reduced by ladder quantum well structure technology, and the internal quantum efficiency of green and semi polar InGaN quantum well growth LED was finally improved.

关 键 词：氮化镓 绿光LED 内量子效率 

分 类 号：TN312.8[电子电信—物理电子学]