碱性CMP表面活性剂对硅衬底表面状态的影响  

Effect of Surfactant on Silicon Substrate Surface State After Alkaline CMP

作　　者：洪姣 刘国瑞 牛新环 刘玉岭 Hong Jiao;Liu Guorui;Niu Xinhuan;Liu Yuling(Computing Center, Tianjin Chengjian University, Tianjin 300384, China;School of Electronic Information Engineering, Hebei University of Technology, Tianjin 300130, China)

机构地区：[1]天津城建大学计算中心,天津300384 [2]河北工业大学电子信息工程学院,天津300130

出　　处：《微纳电子技术》2018年第6期433-437,共5页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007)

摘　　要：主要研究了硅衬底碱性精抛液中表面活性剂对硅衬底表面粗糙度、表面缺陷以及抛光雾的影响。实验结果表明，随着硅衬底精抛液中表面活性剂体积分数由0％增加到1％，表面粗糙度和表面缺陷数量都呈现出迅速降低的变化趋势，表面活性剂对降低表面粗糙度和减少表面缺陷效果明显。但是当表面活性剂体积分数大于5％时，抛光后硅衬底的表面粗糙度和表面缺陷数量都略有升高。表面活性剂体积分数为5％时，表面粗糙度及表面缺陷数量最小。由抛光雾实验可以看出，随着表面活性剂体积分数的增加，硅衬底精抛后的抛光雾值先降低后升高，进一步验证了当表面活性剂体积分数为5％时，抛光后硅衬底的表面状态最好。The effects of the surfactant in the fine polishing alkaline slurry on the surface rough- ness, surface defect and polishing haze of the silicon substrate were mainly studied. The experi- ment results show that when the volume fraction of the surfactant increases from 0% to 1%, the surface roughness and surface defect number decrease rapidly. The surfactant has obvious effect on reducing the surface roughness and surface defect. While the volume fraction of the surfactant is above 5%, the surface roughness and surface defect number of the silicon substrate after polishing increase slightly. When the volume fraction of the surfactant is 5 %, the surface rough- ness and surface defect number are minimal. The polishing haze experiment shows that with the increase of the surfactant volume fraction, the polishing haze value of the silicon substrate after fine polishing decreases firstly and then increases, further indicating that when the volume frac- tion of the surfactant is 5 %, the surface state of the silicon substrate after polishing is optimal.

关 键 词：碱性抛光液 硅衬底 化学机械抛光(CMP) 表面粗糙度 表面缺陷 抛光雾 

分 类 号：TN305.2[电子电信—物理电子学]