基于SiC MOSFET的霍尔迁移率在片测试方法  

A Wafer-level Hall-mobility Measurement Method Based on SiC MOSFET

作　　者：刘岳巍 杨瑞霞 LIU Yuewei;YANG Ruixia(School of Electronic and Information Engineering, Hebei University of Technology, Tianjin, 300130, CHN;School of Electrical and Electronic Engineering, Shijiazhuang Tiedao University, Shijianzhuang, 050043, CHN)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]石家庄铁道大学电气与电子工程学院,石家庄050043

出　　处：《固体电子学研究与进展》2018年第2期90-94,共5页Research & Progress of SSE

基　　金：河北省研究生创新资助项目(22OO56)

摘　　要：研究了一种霍尔迁移率在片测试方法,通过在片测量反型层电荷密度ns和反型层方块电阻Rs得到反型层载流子的霍尔迁移率。通过在待测芯片上固定一个环形磁体获得一个高强度磁场,并且测试磁体与芯片距离和磁场强度的关系。讨论了反型层电荷密度ns和反型层方块电阻Rs的测试原理和方法,采用多次测量求导的办法,消除了霍尔电压测试过程中由于样品制备和测试系统的原因引入漂移电压,提高了测试精度。基于该方法完成测试平台搭建,并应用该测试平台完成了对SiC MOSFET样品霍尔迁移率的测试,得到了霍尔迁移率随栅极电压变化的关系。A wafer-level Hall-mobility measurement method had been studied in this paper,by which the inversion layer carrier mobility was obtained by measuring the inversion layer charge density nsand square resistance Rs.A high intensity magnetic field was realized by placing a magnet upon the chips under test.After then,the relationship of magnetic field intensity and the distance between DUT and magnet was determined.Then,the method of measuring the inversion layer charge density nsand square resistance Rswas discussed.Through several test under different bias and the derivative method,the test accuracy was improved by eliminate the drift voltage induced by sample fabrication process and test system.The test platform was built based on the method,on which the measurement of SiC MOSFET samples was performed and the relationship between Hall mobility and gate voltage was obtained.

关 键 词：霍尔迁移率 在片测试 碳化硅 金属氧化物半导体场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学] TN307