焊料层空洞对IGBT器件热稳定性的影响  

Influence of Voids in Solder Layer on the Temperature Stability of IGBTs

作　　者：肖飞[1] 罗毅飞[1] 刘宾礼[1] 夏燕飞[1] XIAO Fei, LUO Yifei, LIU Binli, XIA Yanfei(National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan 430033, Chin)

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室

出　　处：《高电压技术》2018年第5期1499-1506,共8页High Voltage Engineering

基　　金：国家重点基础研究发展计划(973计划)(2015CB251004);国家自然科学基金(51507185)~~

摘　　要：为了查明封装疲劳对绝缘栅双极型晶体管（IGBT）热特性的影响,从封装结构的角度分析了焊料层空洞对IGBT器件热稳定性的影响规律。首先建立了IGBT芯片封装的有限元模型,然后结合传热学分析了焊料层空洞大小、位置以及分布对IGBT芯片最高结温的影响规律并进行了仿真,最后基于加速寿命实验进行了验证。结果表明：空洞率相同时,芯片对角线上的空洞对芯片最高结温的影响最大;位置相同时,芯片顶点位置空洞大小的变化对芯片最高结温的影响最大;2种情况下,单个空洞的影响均大于相同空洞率下的空洞分布影响,而空洞分布中的中心集中分布对芯片最高结温的影响最大;芯片最高结温随空洞率增大而近似呈线性关系增大,芯片结壳热阻与空洞率也近似呈线性关系增大,验证了理论分析的正确性。研究结论可从封装疲劳的角度对IGBT尽限应用提供指导。In order to find out the influence of package fatigue on the thermal characteristics of insulated gate bipolar transistors（IGBTs）, we analyzed the influence of solder voids on the thermal stability of IGBTs from the aspect of solder layer. First, we established a finite element model of IGBT. Then, we used the heat transfer theory to analyze the influences of void size, location and distribution on the IGBT junction temperature, and simulated the variation law. Finally, we used IGBT samples with different voids through lifetime acceleration experiments to verify the analysis. The results show that voids in diagonal have the most remarkable influence on junction temperature under the same void ratio; voids in the corners have the most remarkable influence on junction temperature under the same location; the influence of single void on chip junction temperature is greater than multiple voids under the same void ratio and the center distribution has greater influence than other distributions. In addition, both the junction temperature and the thermal resistance of junction to case show an approximately linear relation with the void ratio. The experimental results show good consistency with the simulation data. The conclusion can supply important guidance from the perspective of package fatigue to the IGBT applications under extreme conditions.

关 键 词：焊料层空洞 器件热稳定性 空洞率 3维有限元模型 结温 结壳热阻 

分 类 号：TN322.8[电子电信—物理电子学]