GaN基材料中V型缺陷对LED光电性能的影响  

Effects of V-defects in GaN-based Materals on LED Photoelectic Property

作　　者：汪 洋 WANG Yang(Xiamcn University,Xiamcn 361005,China;Xiamcn Changelight Co.,Ltd,Xiamen 361101,China)

机构地区：[1]厦门大学半导体光电材料及其高效转换器件协同创新中心,福建厦门361005 [2]厦门乾照光电股份有限公司,福建厦门361101

出　　处：《厦门大学学报（自然科学版）》2018年第3期383-389,共7页Journal of Xiamen University：Natural Science

摘　　要：发光效率是LED器件的核心指标,为了提升GaN-LED的发光效率,研究了具有不同V型缺陷密度的材料与器件的光致发光及电致发光特性,分析了影响发光效率的因素,研究发现V型缺陷一方面通过提升载流子(特别是空穴)注入效率而改善发光效率,另一方面又会通过减少有效发光面积而降低发光效率,这一竞争机制共同影响具有V型缺陷结构的GaN-LED的发光效率.结果表明,尺寸为0.25mm×0.75mm的芯片在150mA驱动条件下,随着V型缺陷密度的增加,发光功率和外量子效率先上升后下降.对于最优化缺陷密度(4.2×10~8 cm^(-2))的样品,其发光功率和外量子效率分别为183.5mW和45.0%,较最小缺陷密度(1.7×10~8 cm^(-2))样品的发光功率172.2mW和外量子效率42.2%,均约提升6.6%.I.umincsccncc efficiency is one of the key indicators of 1.LEDs. For improving the luminescence efficiency of GaN LEDs, photoluminescence and electroluminescencecharactcristics of materials and devices with various V defect densities are studied. One competitive mechanism is revealed.In one hand, the injection efficiency promotion of carriers （hole mainly） due to the increased V de fectdensity results in the increase of luminescence efficiency. On the other hand,the area decrease of the active region due to the in creased V defectdensity leads to the decrease of luminescence efficiency.LED chips are fabricated with identical size of 0.25 minx 0.75 ram,and are drived at the current of 150 mA.With the increase of the V defect density,the light output and the external quan turn efficiency are improved first and then decreased.The best light output and external quantum efficiency of chips with the V defect density of 4.2×10^8 cm-2 are shown as 183.5 mW and 45.0% respectively,which are 6.6% better than those of 172.2 mW and 42.2% of chips with un optimized V defect density of 1.7× l0^8 cm -2.

关 键 词：GAN 发光二极管 V型缺陷 

分 类 号：O472[理学—半导体物理]