β-Ga_2O_3纳米线的制备技术及其应用研究进展  

Latest Progress in Synthesis and Property Modification and Application of β-Ga_2O_3 Nanowires

作　　者：张浩 邓金祥[1] 孔乐[1] 李瑞东 潘志伟 白志英 Zhang Hao;Deng Jinxiang;Kong Le;Li Ruidong;Pan Zhiwei;Bai Zhiying(College of Applied Sciences, Belting University of Technology, Beijing 100124, China)

机构地区：[1]北京工业大学应用数理学院,北京100124

出　　处：《真空科学与技术学报》2018年第5期427-433,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(60876006;60376007);北京市教育委员会科技计划重点资助项目(KZ201410005008)

摘　　要：综述了β-Ga_2O_3纳米线的研究进展,包括纳米线的制备工艺、生长机理、掺杂研究以及催化剂的生长,介绍了β-Ga_2O_3纳米线在日盲探测器和气敏探测器领域的研究现状,讨论了目前存在的难题及以后研究的方向。The latest advance in deposition, property modification and applications of β-Ga2O3 nanowires was tentatively reviewed. The discussions centered on：i） the growth techniques and mechanisms of β-Ga2O3 nanowires, including but not limited to carbothermal reduction, laser ablation, chemical vapor deposition in vapor-liquid-solid or vapor solid modes, thermal evaporation and RF magnetron sputtering of powder target; ii） the synthesis of β-Ga2O3 nanowires catalyst and impact of dopants, including Pd, In and rare-earth metals on properties modification ; and iii） potential applications in fabrication of photodiodes, solar-blind detectors and gas sensitive detectors. In addition, the existing technical problems, possible solutions and development trends of β-Ga2O3 nanowire array were also briefly discussed in a though provoking way.

关 键 词：β-Ga2O3纳米线 生长机理 催化剂 掺杂 探测器 

分 类 号：O472[理学—半导体物理]