区熔硅单晶生长过程建模综述  

The Introduction of the Modeling of the Growth Process of the Silicon Single Crystal by the Floating Zone Melting Method

作　　者：云娜 庞炳远[1] YUNNa;PANG Bingyuan(The 46th Research Institute of CETC, Tianjin 300220, Chin)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2018年第3期7-9,31,共4页Equipment for Electronic Products Manufacturing

摘　　要：针对区熔法高阻硅单晶的生长过程描述和基本特征,以晶体生长基本原理为基础,从生长机理与模型建立热传导模型(晶体内的热量传输模型和固液界面处的热量传输模型)、热对流模型(晶体表面与氩气之间的对流传热模型和熔体内的对流传热模型)热辐射模型等方面进行了阐述,并针对高品质区熔硅单晶生长提出了相应的研究思路和方法。In this paper,we describe the growth process description and basic characteristics of high resistivity Si single crystals with zone melting method. Based on the basic principle of crystal growth,a heat transfer model is established from the growth mechanism and model（heat transfer model in the crystal and heat transfer model at the solid-liquid interface）,the thermal convection model（convective heat transfer model between crystal surface and argon gas and convective heat transfer model in the melt）,thermal radiation model,etc. are described,and the corresponding research ideas and methods are proposed for high-quality zone silicon single crystal growth.

关 键 词：区熔法 硅单晶 过程建模 

分 类 号：TN304.053[电子电信—物理电子学]