碳化硅单晶衬底精密加工技术研究  

Study on the Precision Machining Technology of Silicon Carbide Single Crystal Substrate

作　　者：赵岁花[1] 梁津 王家鹏 衣忠波[1] ZHAO Suihua;LIANG Jin;WANG Jiapeng;YI Zhongbo(The 45th Research Institution of CETC, Beijing 100 176, China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2018年第3期28-31,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了碳化硅(SiC)材料的结构和特性,分析了SiC材料的应用领域及发展趋势,研究了其单晶衬底精密加工技术,该研究对提高SiC单晶衬底加工表面质量具有指导意义。The structures and property of Silicon Carbide（SiC） are introduced in this paper, and analyzing the application area of SiC and its trend. In addition, the paper studies the precision machining technology of single crystal substrate for SiC, such as grinding, lapping and polishing. The research results are instructive for improving surface machining quality of SiC single crystal substrate.

关 键 词：SIC单晶 衬底 精密加工 

分 类 号：TN305.1[电子电信—物理电子学]