一种高PSRR高阶温度补偿的带隙基准电压源  

A High PSRR High Order Temperature Compensated Bandgap Voltage Reference

作　　者：周前能[1] 罗毅 徐兰[1] 李红娟[1] 唐政维[1] 罗伟 ZHOU Qianneng;LUO Yi;XU Lan;LI Hongjuan;TANG Zhengwei;LUO Wei(Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China;School of Physics and Electronic Engineering, Sichuan University of Science and Engineering, Zigong, Sichuan 643000, P. R. China)

机构地区：[1]重庆邮电大学光电信息感测与传输技术重庆重点实验室,重庆400065 [2]四川理工学院物理与电子工程学院,四川自贡643000

出　　处：《微电子学》2018年第3期300-305,共6页Microelectronics

基　　金：重庆市重点产业共性关键技术创新专项资助项目(cstc2016zdcy-ztzx0038;cstc2017zdcy-zdyf0166);重庆市自然科学基金资助项目(CSTC2016JCYJA0347);模拟集成电路重点实验室基金资助项目(6142802011503)

摘　　要：基于SMIC 0.18μm CMOS工艺,设计了一种高电源抑制比(PSRR)、高阶温度补偿的带隙基准电压源(BGR)。在传统带隙基准电压源的基础上,增加了一个温度分段曲率补偿电路以及一个ΔVGS温度补偿电路,使得该BGR的温度特性得到有效改善。采用前调整器技术,使得该BGR获得高PSRR特性。仿真结果表明,当温度在-55℃~125℃范围变化时,该BGR的温度系数为8.1×10-7/℃,在10Hz、100 Hz、1kHz、10kHz、100kHz频率处的PSRR分别为-90.15、-90.13、-89.83、-81.15、-58.78dB。A high power supply rejection ratio（PSRR）high order temperature compensated bandgap voltage reference（BGR）was designed in SMIC 0.18μm CMOS process.By adding apiecewise curvature temperature compensation circuit and a ΔVGS temperature compensation circuit to the conventional BGR,the temperature performance of the designed BGR was effectively improved.The proposed BGR achieved a high PSRR by adopting the technique of pre-regulator.Simulation results showed that the BGR＇s temperature coefficient was 8.1×10^-7/℃in the temperature range from-55 ℃to 125 ℃.The PSRR was-90.15 dB,-90.13 dB,-89.83 dB,-81.15 dB and-58.78 dB at 10 Hz,100 Hz,1 kHz,10 kHz and 100 kHz respectively.

关 键 词：带隙基准电压源 前调整器 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]