InGaAs/InP盖革模式雪崩光电二极管阵列性能一致性研究  

Research of Performance Uniformity Based on InGaAs/InP Geiger Mode Avalanche Photodiode Array

作　　者：侯丽丽 韩勤[1,2] 王帅 叶焓[1] HOU Lili;HAN Qin;WANG Shuai;YE Han(State Key Lab. of Integrated Optoeleetron. , Institute of Semiconductors of Chinese Academy of Sciences, Beijing 100083, CHN;School of Electronic, Electrical and Communication Engin. , University of Chinese Academy of Sciences, Beijing 100049, CHN)

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [2]中国科学院大学电子电气与通信工程学院,北京100049

出　　处：《半导体光电》2018年第3期326-331,353,共7页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2016YFB0402404);国家自然科学基金项目(61674136;61635010;61435002)

摘　　要：InGaAs/InP盖革模式雪崩光电二极管(APD)阵列的性能与阵列片内均匀性密切相关。阵列面元的主要结构参数有倍增区厚度、电荷层厚度和掺杂浓度、吸收区的厚度以及器件工作的过偏压。它们的不一致性不仅会造成器件本身性能的差异,还为后续的读出电路带来了巨大的挑战。通过研究APD结构参数变化对其击穿电压(V_(break))、暗计数率(DCR)和单光子探测效率(PDE)的影响,将APD阵列面元间击穿电压波动控制在±1V以内,使暗计数率和光探测效率的波动小于10%,从而得到不同温度下各个结构参数的最大允许波动值,确定了每个温度下制约器件性能的主要因素,为大规模、高性能盖革模式雪崩光电二极管阵列的材料生长和工艺制备提供了理论依据。The performance of InGaAs/InP avalanche photodiode array is closely associated with the chip uniformity.The structure parameters mainly include the thickness of multiplication layer,the thickness and doping concentration of the charge layer,the thickness of the absorbtion layer and also the overbias of the devices.Their nonuniformity not only affects its properties such as breakdown voltage,dark count rate（DCR）,photo detection efficiency（PDE）,but also brings great challenges for subsequent readout circuits.In this paper,the influence of the structural parameters on V_（break）,DCR and PDE was analyzed.By controlling the volatility of V_（break） within±1 Vas well as DCR and PDE within 10%,the maximum allowable fluctuation value of each structural parameter under different temperatures was obtained.The main factors related to the performance of devices were summarized,providing theoretical reference for the material growth and fabrication of large scale and high performance Geiger mode avalanche photodiode arrays.

关 键 词：盖革模式 INGAAS/INP 雪崩光电二极管 阵列 均匀性 

分 类 号：TN215[电子电信—物理电子学]