表面硫钝化对GaAs材料光响应特性的影响  

Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials

作　　者：夏宁 方铉 容天宇 王登魁 房丹 唐吉龙 王新伟 王晓华 李永峰[2] 姚斌[2] 魏志鹏 Xia Ning;Fang Xuan;Rong Tianyu;Wang Dengkui;Fang Dan;Tang Jilong;Wang Xinwei;Wang Xiaohua;Li Yongfeng;Yao Bin;Wei Zhipeng(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China;College of Physics, Jilin University, Changchun, Jilin 130023, China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]吉林大学物理学院,吉林长春130023

出　　处：《中国激光》2018年第6期92-97,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金(61404009;61474010;61574022;61504012;61674021;11674038);吉林省科技发展计划(20160519007JH;20160101255JC;20160204074GX;20170520117JH)

摘　　要：采用湿法硫钝化的方式,显著降低了砷化镓(GaAs)材料的表面态密度。钝化处理后的GaAs薄膜光致发光强度提高了约14倍,光电流和响应度均增大。从能带角度分析了样品性能提升的原因,结果表明,钝化处理有利于表面态密度和肖特基势垒高度的调节,进而提升了样品性能。The surface state density of gallium arsenide（GaAs）materials can be significantly lowered by surface sulfur passivation.After passivation,a 14-fold enhancement in the photoluminescence intensity of GaAs films is observed and the photocurrent and responsivity also increase.The performance improvement is analyzed from the perspective of energy bands and the results indicate that the passivation treatment is helpful for the adjustments of the surface density and the Schottky barrier height,which further improves the material performances.

关 键 词：薄膜 砷化镓 光致发光 硫钝化 光电流 光响应 

分 类 号：O472[理学—半导体物理]