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作 者:袁文迁 赵志斌[2] 焦超群[1,2] 莫申扬 唐新灵 YUAN Wenqian1, ZHAO Zhibin2,JIAO Chaoqun1,2,MO Shenyang2, TANG Xinling3(1. School of Electrical Engineering, Beijing Jiaotong University,Beijing 100044, China;2. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China ElectricPower University, Beijing 102206,China; 3. Global Energy InterconnectionResearch Institute? Beijing 102209, Chin)
机构地区:[1]北京交通大学电气工程学院,北京 100044 [2]华北电力大学新能源电力系统国家重点实验室,北京 102206 [3]全球能源互联网研究院,北京 102209
出 处:《华北电力大学学报(自然科学版)》2018年第3期19-27,共9页Journal of North China Electric Power University:Natural Science Edition
基 金:国家自然科学基金资助项目(51477048);中央高校基本科研业务费专项资金项目(2016JBM059);新能源电力系统国家重点实验室开放课题基金项目(LAPS17017)
摘 要:IGBT动态测试平台的寄生电感影响IGBT器件的开关参数以及开关损耗,因此,提取动态测试平台回路的寄生电感对于准确获得IGBT器件的开关参数具有重要意义。传统的寄生电感提取方法忽略了回路寄生电阻的影响,给寄生电感的提取带来误差。为了提高寄生电感提取的准确性,提出了采用IGBT开通波形来计算动态特性测试平台寄生电感的方法,通过对开通电流上升过程的分析,建立了包含回路寄生电阻的等效电路模型及电路方程。仿真结果表明该方法的计算误差低于传统计算方法。为验证该方法的正确性,搭建了IGBT动态特性测试平台,实验结果表明,该方法实现了寄生电感参数的提取,为提供准确的IGBT器件开关参数奠定了基础。The parasitic inductance of IGBT dynamic testing platform affects the switching parameters and losses of IGBT. In order to obtain accurate switching parameters of IGBT,the parasitic inductance of the dynamic testing platform needs to be extracted. The traditional extraction methods of parasitic inductance ignore the influence exerted by parasitic resistance and thus resulting in some errors. Aiming at improving the accuracy of parasitic inductance extraction,this paper proposed a method of extracting parasitic inductance of IGBT dynamic testing platform based on the turning-on process. By analyzing the process of current rise time and taking parasitic resistance into account,a parasitic inductance calculation model was established. The simulation results showed that the calculation error of this method was lower than that of conventional methods. The author established a dynamic testing platform of IGBT and verified the method by experiment. The results showed that the parasitic inductance can be extracted by using this method,which provided a reliable way to obtain accurate IGBT switching parameters.
分 类 号:TN322.8[电子电信—物理电子学]
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