二硫化钼薄膜的刻蚀方法及其应用  

Etching Methods and Application of Molybdenum Disulfide Film

作　　者：奚清扬 刘劲松[1,2] 李子全[1,3] 朱孔军 台国安[2] 宋若谷[1] Qingyang xi;Jinsong Liu;Ziquan Li;Kongjun Zhu;Guoan Tai;Ruogu Song(College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Material Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China)

机构地区：[1]南京航空航天大学材料科学与技术学院,南京211106 [2]南京航空航天大学机械结构力学及控制国家重点实验室,南京210016 [3]南京邮电大学材料科学与工程学院,南京210003

出　　处：《化学进展》2018年第6期847-863,共17页Progress in Chemistry

基　　金：中央高校基本科研业务费专项资金(No.NS2017038);国家自然科学基金项目(No.51372114;61474063;51672130);江苏省高等学校大学生实践创新训练计划项目(No.201710287032X);江苏省自然科学基金项目(No.BK20151475)资助~~

摘　　要：过渡金属硫化物因能带结构与层数具有明显的依赖关系而受到广泛关注,尤其是二维二硫化钼MoS_2)薄膜因其优良的光电性能而成为研究热点。目前,化学气相沉积法(CVD)和剥离法已成为制备MoS_2薄膜的主要方法,但这两种方法均存在难以精确控制MoS_2层数的问题,研究证实通过刻蚀手段能够对MoS_2薄膜层数进行进一步加工,从而得到单层或特定层数的样品。本文综述了基于不同刻蚀原理的MoS_2薄膜刻蚀技术的国内外研究进展,分析讨论了不同刻蚀技术对刻蚀后MoS_2薄膜质量的影响,介绍了MoS_2刻蚀方法在场效应晶体管(FET)以及其他光电器件领域的实际应用和发展前景,最后对将来研究中需要着力解决的问题进行了展望。Transition metal dichalcogenides（ TMDCs） have been widely concerned due to dependence of its energy band on the number of layers. Especially the two-dimensional molybdenum disulfide（ MoS2） film has become a research hot spot because of its excellent photoelectric properties. So far,chemical vapor deposition（ CVD） and exfoliation have become the main methods for preparing MoS2 films,but it is very difficult to precisely control the layers of MoS2 using these methods. Research confirms that the MoS2 films can be further processed by etching methods so as to obtain the sample with a monolayer or a specific number of layers. Therefore,in this paper the research progress about etching technology of MoS2 films based on different etching mechanisms is reviewed and the influence of different etching techniques on the quality of etched films is analyzed. Moreover,the application and prospects of these etching methods in field effect transistor（ FET） and other optoelectronic devices are also introduced.Finally,problems that need to be solved in the future study are prospected.

关 键 词：二硫化钼 刻蚀 单层 场效应晶体管 光电器件 

分 类 号：O614.6[理学—无机化学] O649[理学—化学]