CdSiP_2多晶提纯与单晶生长  

Polycrystal Purification and Single Crystal Growth of CdSiP_2

作　　者：冯波[1] 赵北君[1] 何知宇[1] 陈宝军[1] 黄巍[1] 刘慧[1] 刘梦迪 沙铭宇 FENG Bo;ZHAO Bei-jun;HE Zhi-yu;CHEN Bao-jun;HUANG Wei;LIU Hui;LIU Meng-di;SHA Ming-yu(College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China)

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《人工晶体学报》2018年第7期1299-1304,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51172149)

摘　　要：采用重结晶技术,对CdSiP_2多晶进行快速下降提纯,以提纯后的晶锭为原料,利用改进的垂直布里奇曼法生长出CdSiP_2单晶体,尺寸达Φ18 mm×51 mm。经能量色散仪(EDS),X射线衍射(XRD),X射线光电子能谱(XPS)以及电感耦合等离子体光谱仪(ICP)测试表明,重结晶提纯能有效降低CdSiP_2多晶中Fe、Mn等影响晶体性能的微量元素含量,获得高纯四方黄铜矿结构的CdSiP_2多晶材料。采用X射线衍射仪和红外傅立叶变换分光光度计分别对生长的CdSiP_2单晶体自然解理面与厚度2 mm的CdSiP_2晶片进行测试,获得了{101}晶面族六级衍射峰,晶片在2~7μm波段范围的红外透过率高于53%,对应的吸收系数低于0.09 cm-1。上述研究结果表明,采用提纯后原料生长的CdSiP_2单晶体结晶性好,光学性能优良,可进一步用于制作CdSiP_2激光频率转换器件。Recrystallization technology was used to purify CdSiP2 polycrystalline ingots. the purified polycrystal was used as raw materials,and a CdSiP2 single crystal 18 mm in diameter and 51 mm in length was successfully grown by modified Bridgman method. The results of energy dispersive spectrometer（ EDS）,X-ray diffraction（ XRD）,X-ray photoelectron spectroscopy（ XPS） and inductively coupled plasma spectrometer（ ICP） test indicated that purification can effectively reduce the content of trace elements that affect the crystal performance in CdSiP2 polycrystals,such as Fe and Mn,and successfully obtain high-purity tetragonal chalcopyrite CdSiP2 polycrystalline materials. The cleavage surface of CdSiP2 single crystal was subject to XRD measurement,and six X-ray diffraction peaks belong to{ 101} family of crystal planes have been observed. The polished wafer was tested by infrared（ IR）spectrophotometer. The IR transmittance of a sample with 2 mm thickness is higher than 53% and the corresponding absorption coefficient is less than 0. 09 cm-1 in the region of 2-7 μm. The above results show that the crystallinity and optical performance of as-grown crystal are good,and it can be used to fabricate CdSiP2 laser frequency converter.

关 键 词：CdSiP2 提纯 单晶生长 表征 ICP-AES 

分 类 号：O78[理学—晶体学]