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作 者:潘书万 庄琼云[2] 陈松岩[3] 黄巍[3] 李成[3] 郑力新 PAN Shuwan;ZHUANG Qiongyun;CHEN Songyan;HUANG Wei;LI Cheng;ZHENG Lixin(College of Engineering,Huaqiao University,Quanzhou 362021;College of Information and Electronic Engineering,Liming Vocational University,Quanzhou 362000;Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005)
机构地区:[1]华侨大学工学院,泉州362021 [2]黎明职业大学信息与电子工程学院,泉州362000 [3]厦门大学物理系半导体光子学研究中心,厦门361005
出 处:《材料导报》2018年第11期1928-1931,1942,共5页Materials Reports
基 金:福建省自然科学基金面上项目(2015J01655);福建省教育厅基金项目(A类)(JA14025;JA13429);华侨大学科研基金资助项目(12BS226)
摘 要:采用超高真空气相沉积系统在Si(100)衬底上制备非晶硒(Se)薄膜,然后快速热退火制得Se纳米晶薄膜。SEM观察结果表明,当热退火温度高于140℃,薄膜表面形貌从条状裂纹逐渐变成孤立的六角块状结构。Raman和XRD测试分析发现,退火后的Se纳米晶均为三角晶型结构,当退火温度高于140℃时,Se开始沿(100)方向择优取向结晶。分析得出,在Si(100)衬底上的Se晶粒(100)晶面的激活能比(101)晶面的激活能低,因而在(100)面上的结晶速率比(101)面上的结晶速率大,使得Se在(100)方向择优结晶。笔者认为这是因为Si(100)衬底对Se的结晶具有诱导作用,致使硒的结晶具有各向异性。The selenium(Se)amorphous films were fabricated on Si(100)substrates via an ultrahigh vacuum chemical vapor deposition technique,and were subsequently treated by a rapid thermal-annealing process under different temperatures to prepare a series of nanocrystalline films.We observed a surface morphology transformation from the streak-like crack to the structure of hexagonal blocks via SEM when the annealing temperature was higher than 140 ℃.XRD and Raman spectroscopy indicated that all the thermal-annealed Se nanocrystalline films consist of trigonal crystallites,and the Se nanocrystallites begin to preferentially crystallize along(100)orientation on the Si(100)substrate as the annealing temperature exceeds 140 ℃.The oriented crystallization of Se cry can be attributed to the lower activation energy along the(100)orientation compared to the(101)orientation,which causes a relatively greater crystallization rate along the(100)orientation.We ascribed this to an inducing effect of Si(100)substrate,which endows the crystallization of amorphous Se with anisotropy.
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