Fe离子价态和占位对Fe掺杂In_2O_3稀磁半导体铁磁性的影响  

The Effect of Fe Ion Valence and Occupation on Fe-doped In_2O_3 Diluted Magnetic Semiconductor Ferromagnetism

作　　者：马甜甜 乔文 MA Tiantian;QIAO Wen(College of Science,Henan University of Technology,Zhengzhou 450001,China)

机构地区：[1]河南工业大学理学院,河南郑州450001

出　　处：《新乡学院学报》2018年第6期16-21,共6页Journal of Xinxiang University

摘　　要：从实验和理论上研究了氧空位、Fe离子价态和占位对Fe掺杂In_2O_3稀磁半导体铁磁性的影响。研究发现In_2O_3中的Fe^(3+)离子倾向占据8b晶位,对室温铁磁性没有贡献;Fe^(2+)离子可通过氧空位来诱导,并倾向占据24d晶位;室温铁磁性归因于24d晶位Fe^(2+)离子的4s电子和3d电子的杂化。研究结果不仅清晰地给出了Fe掺杂In_2O_3稀磁半导体铁磁性来源的物理图像,而且提供了一种通过控制材料中氧空位含量和掺杂离子价态来调控磁性的方法。The effects of oxygen vacancy, Fe ion valence and occupation on Fe-doped In2O3 diluted magnetic semiconductor ferromagnetism were studied experimentally and theoretically. The study found that the Fe^3＋ ion tendency in In2O3 occupied the 8 b crystal position and did not contribute to room temperature ferromagnetism. Fe^2＋ ion can be induced by oxygen vacancy and tend to occupy 24 d crystal positions. The ferromagnetism of room temperature was attributed to the hybridization of the 4 s electron and 3 d electron of the 24 d crystal bit Fe^2＋ ion. Our results not only clearly showed the physical picture of Fe-doped In2O3 diluted magnetic semiconductor ferromagnetic source, and provided a method to regulate magnetism by controlling oxygen vacancy content and Fe-doped ion valence in the material.

关 键 词：纳米材料 氧化铟 稀磁半导体 磁性 

分 类 号：O472.5[理学—半导体物理] TN305.3[理学—物理]