一种带有浮空阶梯场板的AlGaN/GaN SBD仿真  

Simulation of AlGaN/GaN SBD with stepped insulator floating field plate

作　　者：李志远 马亚超 LI Zhi-yuan;MA Ya-chao(School of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China)

机构地区：[1]哈尔滨工程大学信息与通信工程学院,哈尔滨150001

出　　处：《哈尔滨商业大学学报（自然科学版）》2018年第4期463-466,482,共5页Journal of Harbin University of Commerce：Natural Sciences Edition

摘　　要：研究了一种带有浮空阶梯场板的AlGaN/GaN肖特基势垒二极管结构—SFFP-SBD(Stepped Insulator Floating Field Plate).该结构是结合浮空场板,阶梯场板的优点,在反向状态下,浮空阶梯场板和横向场板之间的静电荷影响沟道内的电场,在沟道内形成电场峰值,并且浮空阶梯场的钝化层较厚,场板向阴极方向延伸,浮空阶梯场板的调制沟道作用会更加明显,提升反向耐压效果明显.使用Silvaco TCAD软件对器件的浮空阶梯场板的钝化层厚度和水平位置进行优化,仿真结果显示,钝化层厚度为500 nm,S为0μm时,击穿电压达到最大为-900 V.因此,该器件可以应用在高电压的电路中.A novel AlGaN/GaN Schottky barrier diode SFFP-SBD（ Stepped Insulator Floating Field Plate） was studied. The structure was a combination of advantages of floating field plate and the stepped insulator field plate. In the reverse characteristics,the electric field in the channel will be influenced by the static charge produced between the floating field plate and the lateral field plate,forming an electric field peak in the channel,and the thickness of floating plate was thicker,the field plate which extends toward the cathode,modulate the channel modulation obviously,enhance the reverse voltage effect. The Silvaco TCAD software will be used in the optimized thickness of stepped insulator field plate passivation layer and the horizontal position,and the simulation results showed that the optimized passivation layer thickness was 500 nm,S was 0 μm,where the maximum breakdown voltage reached-900 V. Therefore,the device can be used in high voltage circuits.

关 键 词：ALGAN/GAN SFFP-SBD 击穿电压 钝化层厚度 水平位置 

分 类 号：TN34[电子电信—物理电子学]