单轴应变Si纳米NMOSFET电特性优化  

Electrical Properties Optimization of the Uniaxial Strained Si Nano-Scale NMOSFET

作　　者：廖晨光 郝敏如 LIAO Chenguang;HAO Minru(School of Microelectronics,Xidian University,Xi＇an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071

出　　处：《电子科技》2018年第7期46-50,共5页Electronic Science and Technology

基　　金：陕西省科技计划项目(2016GY-085)

摘　　要：针对小尺寸器件二级物理效应对集成电路正常工作的影响,同时为了进一步提高集成电路的性能,本文提出了利用Sentaurus TCAD软件仿真进行小尺寸单轴应变Si n型金属氧化物半导体场效应晶体管(NMOSFET)器件参数优化的方法。首先利用Sentaurus TCAD软件,对氧化物半导体场效应晶体管(MOSFET)源、栅、漏上淀积氮化硅薄膜(SiN)来分析沟道中应力的变化得出沟道中产生应力的必要条件是沟道上方具有一层薄栅氧化层,其次进行了单轴应变Si NMOSFET的电性能随沟道应力以及沟道长度的变化仿真分析,接着利用软件仿真分析栅氧化层厚度、SiN膜淀积次数和厚度等因素对沟道应力的影响得出优化参数,最后利用优化后的参数对小尺寸单轴应变Si NMOSFET与常规器件的驱动电流进行了对比,结果显示模拟90 nm、65 nm、45 nm单轴应变Si NMOS器件相对常规器件分别提升了26.8%、27.8%和29.9%。因此利用Sentaurus TCAD软件仿真的方法为小尺寸单轴应变Si NMOSFET器件制造工艺提供了有效参考。In order to further improve performance of the integrated circuits,the method of parameter optimization of uniaxial strained Si metal oxide semiconductor field effect transistor（ NMOSFET） is proposed by Sentaurus TCAD simulation software. First,the source,gate,and drain of oxide semiconductor field effect transistor（ MOS） are deposited on silicon nitride thin film（ SiN） to analyze the stress distribution in the channel,using Sentaurus TCAD software.Second,the simulation analysis of the electrical properties of uniaxial strained Si NMOSFET with channel stress as well as channel length is performed. Third,the influence of gate oxide thickness,deposition times and thickness of SiN film on channel stress is analyzed by software simulation,and the optimization parameters are obtained. Finally,the driving current of the small size uniaxial strained Si NMOSFET is compared with that of the conventional device by using the optimized parameters. The results show that the uniaxial strained Si NMOSFET of simulated 90 nm,65 nm,45 nm relative to conventional devices increased 26. 8%,28. 7% and 29. 9%,respectively. The research results provide an effective reference for the fabrication of small size uniaxial strained Si NMOSFET devices.

关 键 词：应变SI NMOSFET 氮化硅薄膜(SiN) 沟道应力 参数优化 

分 类 号：TN460[电子电信—微电子学与固体电子学]