毫米波频段下纳米MOSFET的导纳参数建模及应用  

Modeling and Application of Admittance Parameters of Nanometer MOSFET Under Millimeter Wave Band

作　　者：王军[1] 王东振 WANG Jun;WANG Dongzhen(School of Info.Eng.,Southwest Univ.of Sci.and Technol.,Mianyang 621010,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《工程科学与技术》2018年第4期186-192,共7页Advanced Engineering Sciences

基　　金：国家自然科学基金资助项目(699010003);四川省教育厅科研项目资助(18ZA0502)

摘　　要：为了统一表征毫米波频段下纳米MOSFET从强反型区到弱反型区的偏置依赖性,对高频MOSFET等效电路建模及其参数提取技术进行了研究,给出了一种简单、精确的小信号模型参数获取方法。基于45 nm MOSFET的器件物理结构,通过综合考虑该器件的本征物理特性、管脚电磁特性以及测试焊盘与测试互连线的寄生特性,描述了一种适用于参数提取的MOSFET毫米波等效电路模型。通过对所给出的45 nm MOSFET毫米波小信号等效电路进行双端口网络参数分析,推导了其准静态近似的毫米波等效电路的导纳()参数的一阶简化数学模型。所建参数模型被应用于等效电路的元件值提取,以保证不同偏置条件下参数提取结果的连续性和平滑度。利用栅指数=10、栅宽=2μm、栅长=45 nm的射频多指NMOSFET,实验验证了1~50 GHz频段内所建参数模型在不同偏置点下的模拟精度,并表征了45 nm器件的偏置依赖性。使用ADS2013仿真设计工具的模拟结果与测量数据进行一致性对比,验证了本文所建模型的实用性以及由其派生的参数提取算法的准确性。因此,所建参数模型易于高精度移植到自动化仿真设计工具中。等效电路本征元件参数单调特性的不同表征,对于指导毫米波集成电路从强反型区到弱反型区的优化设计具有重要的意义。In order to describe the bias dependence of nanometer MOSFET from the strong inversion to weak inversion regimes under millimeter wave band, the modeling of the high frequency equivalent circuit of MOSFET and its technology of parameter extraction were studied. A simple and accurate method for obtaining the parameters of the small signal model was proposed. Based on the physical structure of device of 45 nm MOSFET, a millimeter wave equivalent circuit model of MOSFET suitable for parameter extraction was described by taking into account the intrinsic physical characteristics of the devices, the electromagnetic characteristics of the pin and the parasitic characteristics of the test pad and test interconnects. By analyzing the two port network parameters of the presented millimeter wave small signal equivalent circuit of 45 nm MOSFET,the first order simplified mathematical model of admittance（Y） parameter of quasi-static approximate millimeter wave equivalent circuit was developed. Then, the proposed Y parameter model was applied to extract the component of equivalent circuit of nanometer MOSFET in order to offer the excellent continuity and smoothness of the extracted results under different bias conditions. Using the radio frequency multi-finger NMOSFET with the number of fingers Nf=10, the gate width W=2 μm and the gate length L=45 nm, the simulation accuracy of the presented Y parameter model from 1 to 50 GHz was verified under different bias points. The experimental results also showed the bias dependence of 45 nm MOSFET. The practicability and accuracy of proposed model and the parameters extract algorithm derived from it were also verified by the consistency comparison of the simulated results by using ADS2013 tool and the measured data. Therefore, the proposed Y parameter model can be transplanted to the automatic simulation design tool easily and accurately. The different characterizations of monotonic features of the intrinsic element parameters of the equivalent circuits is of great significance to

关 键 词：纳米MOSFET 导纳参数 小信号等效电路 毫米波 

分 类 号：TN386.1[电子电信—物理电子学]