沟槽式FS-IGBT各部分对其性能的影响研究  

Research on influence of trench FS-IGBT ′s each part on its performance

作　　者：张满红[1] 邹其峰 ZHANG Manhong;ZOU Qifeng(Institute of Modem Electronic Science,North China Electric Power University,Beijing 102206,China)

机构地区：[1]华北电力大学现代电子科学研究所,北京102206

出　　处：《现代电子技术》2018年第14期5-9,共5页Modern Electronics Technique

基　　金：国家自然科学基金(61176080)~~

摘　　要：沟槽式FS-IGBT是当前IGBT中最为先进的结构,它结合PT-IGBT和NPT-IGBT各自的优点,具有较薄的N-区以及FS场截止层,能够使导通压降更低并且可以有效减少关断时间和关断损耗。主要通过仿真软件Sentaurus TCAD对FS-IGBT进行工艺与电学特性仿真,通过改变不同部分的参数,如栅极的长宽,N型漂移区的厚度,P-base区的注入剂量及能量等,研究对其性能的影响。结果表明栅极的长宽和漂移区厚度的增加会使BV变大,场截止层电阻率的增加会使导通电压变小,阈值电压会随着P-base区的注入剂量及能量的变大而变大。通过仿真结果得到了结构参数对器件性能的影响,为FS-IGBT的设计提供参考。The trench FS-IGBT is currently the most advanced IGBT structure,which combines the advantages of PT-IGBT and NPT-IGBT,possesses a thin N-region and FS layer,can make the conductive voltage drop lower,and effectively decrease the turn-off time and turn-off loss. The technique and electrical feature of FS-IGBT is simulated by using the simulation software Sentaurus TCAD,during which the influence on FS-IGBT′ s performance is researched by changing the parameters of different parts,such as grid length and width,thickness of N-type drift region,and injected dose and energy of P-base region.The results show that the BV becomes larger as the width and length of the grid,and the thickness of the drift region increase,the conductive voltage becomes lower as the resistivity of FS layer increases,and the threshold voltage becomes higher with the increase of the injected dose and energy of P-base region. The influence of structure parameters on device performance is obtained from the simulation results,which provides a reference for the design of FS-IGBT.

关 键 词：FS-IGBT Sentaurus TCAD 结构仿真 电学特性 性能影响 导通电压 

分 类 号：TN386-34[电子电信—物理电子学]