大尺寸HVPE反应室生长GaN的数值模拟  

Numerical Simulation of the Large-Scale HVPE Reactor Chamber for the Growth of GaN

作　　者：朱宇霞 陈琳[1,2] 顾世浦 修向前[1] 张荣[1] 郑有炓[1] Zhu Yuxia;Chen Lin;Gu Shipu;Xiu Xiangqian;Zhang Rong;Zheng Youdou(School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;School of Electronic Science and Engineering,Nanfing University of Posts and Telecommunications,Nanjing 210046,China)

机构地区：[1]南京大学电子科学与工程学院,南京210023 [2]南京邮电大学电子科学与工程学院,南京210046

出　　处：《半导体技术》2018年第8期616-621,共6页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2017YFB0404201);固态照明与节能电子学协同创新中心资助项目;江苏高校优势学科建设工程资助项目(PAPD);国网山东电力公司技术开发基金资助项目

摘　　要：利用有限元法对单片6英寸（1英寸=2.54 cm）Ga N衬底用氢化物气相外延（HVPE）生长系统的工艺参数进行了数值模拟和优化。通过建立反应室二维几何模型,依次改变HVPE系统中的Ga Cl,NH3和分隔气（N2）流速等主要参数进行数值模拟,研究分析了反应室内各反应物的浓度分布和衬底上Ga N的生长速率变化,同时考虑了涡旋分布以及Ga Cl出口管壁上寄生沉积等对衬底上Ga N生长的影响,并给出了HVPE系统高速率均匀生长Ga N的优化参数。模拟分析还表明,适当降低HVPE反应室内的压强可以改善衬底上Ga N生长的均匀性。The process parameters of hydride vapor phase epitaxy（ HVPE） growth system for a single-chip 6-inch（ 1 inch = 2. 54 cm） Ga N substrate were numerical simulated and optimized by using the finite element method. By establishing the two-dimensional geometry model,the numerical simulation was carried out by in turn changing the important parameters,such as the flow rate of Ga Cl,NH3 and separation gas（ N2）,etc. The concentration distribution of various reactants and the growth rate of Ga N on the substrate were researched and analyzed. Meanwhile,the effects of the vortex distribution and parasitic deposition on the exit wall of Ga Cl on the growth of Ga N on the substrate were also considered. And the optimization parameters were obtained for the growth of Ga N with high growth rate and high thickness uniformity in HVPE systems. The simulation analysis also shows that the growth uniformity of Ga N on the substrate can be improved by reducing the pressure appropriately in the HVPE reaction chamber.

关 键 词：氢化物气相外延(HVPE) 氮化镓(GaN) 数值模拟 生长速率 相对均匀性 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054