气体流量对氢化非晶氧化硅(a-SiO_x∶H)钝化性能影响  

Influence of gas flow rate on properties of hydrogenated amorphous silicon oxide(a-SiO_x∶H)

作　　者：何玉平[1,2] 袁贤 刘宁 黄海宾[2] HE Yuping;YUAN Xian;LIU Ning;HUANG Haibin(School of Science,Nanchang Institute of Technology,Nanchang 330099,China;Institute of Photovoltaics,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌工程学院理学院,江西南昌30099 [2]南昌大学光伏研究院,江西南昌330031

出　　处：《南昌工程学院学报》2018年第4期53-56,90,共5页Journal of Nanchang Institute of Technology

基　　金：江西省青年科学基金资助项目(20171BAB216014)

摘　　要：本征钝化层是非晶硅/晶体硅异质结太阳电池的核心技术之一,以n型直拉单晶硅片(n-Cz-Si)为衬底采用热丝化学气相沉积法(HWCVD)沉积氢化非晶氧化硅(a-SiO_x∶H),研究气体流量对其钝化性能的影响。结果表明,CO_2,H_2,SiH_4流量均能显著的影响a-SiO_x∶H钝化性能,最优钝化效果CO_2,H_2,SiH_4流量分别为0.3 sccm,16sccm,10 sccm,双面沉积a-SiO_x∶H后硅片的少子寿命达到了466 s(注入浓度取1×10 cm^(-3))。Intrinsic passivation layer is one of the core technologies of amorphous silicon/crystalline silicon heterojunction solar cells.Hydrogenated amorphous silicon oxide（a-SiOx∶H） was deposited on N type Czochralski silicon wafer（n-Cz-Si）by hot filament chemical vapor deposition（HWCVD）.The results show that CO2,H2 and SiH4 flow can significantly affect the passivation performance of a-SiOx∶H,and the optimal passivation effect is that CO2,H2 and SiH4 flow rate is 0.3 sccm,16 sccm and 10 sccm respectively.The minority carrier lifetime of the double side deposited a-SiOx∶H is 466 s（Minority carrier density is 1×10 cm^（-3））.

关 键 词：气体流量 氢化非晶氧化硅(a-SiOx∶H) HWCVD 少子寿命 椭偏 

分 类 号：O484[理学—固体物理]