溶液法制备IGZO/IZO薄膜的电学特性研究  

Study on Electrical Characteristics of IGZO/IZO Thin Films by Solution Method

作　　者：殷波[1] 李勇男[1] 潘东[1] 汤猛[1] 向超 钟传杰[1] YIN Bo;LI Yongnan;PAN Dong;TANG Meng;XIANG Chao;ZHONG Chuanjie(School of Internet of Things,Jiangnan University,Wuxi,Jiangsu 214122,P.R.China;SIPPR Engineering Group Co.,Ltd.,Zhengzhou 450007,P.R.China)

机构地区：[1]江南大学物联网工程学院,江苏无锡214122 [2]机械工业第六设计研究院有限公司,郑州450007

出　　处：《微电子学》2018年第4期537-541,554,共6页Microelectronics

基　　金：国家自然科学基金资助项目(60776056)

摘　　要：基于溶液旋涂法、高压退火工艺,制备了非晶铟镓锌氧化物(IGZO)薄膜、铟锌氧化物(IZO)薄膜和双层IGZO/IZO薄膜,研究了这些薄膜的电学特性。结果表明,在相同制作工艺下,IGZO单层薄膜的电流随外加恒流源时间的偏移不明显,而双层IGZO/IZO薄膜的电流随外加恒流源时间的偏移较大。退火温度在240℃~300℃范围内,电流的偏移量随温度升高而减小,回滞幅度也减小。薄膜的界面态对薄膜器件的I-V特性有较大影响,升高退火温度可改善IGZO/IZO双层薄膜界面特性。Based on the solution spin-coating method and high pressure annealing process,amorphous indium gallium zinc oxide（IZO）thin films,indium zinc oxide（IZO）thin films and double layer IGZO/IZO thin films were prepared,and the electrical properties of these films were investigated.The results showed that under the same fabrication process,the current deviation of the IGZO single layer film was not obvious with the time of the external constant current source,while the current deviation of the IGZO/IZO bilayer film was larger with the time of the external constant current source.At the annealing temperature range of 240 ℃ to 300 ℃,the current deviation decreased with the increase of the temperature,and the hysteresis amplitude also decreased.The interfacial states of the films had great influence on the I-Vcharacteristics of the thin film devices,and the interfacial characteristics of IGZO/IZO bilayer films could be improved by increasing the annealing temperature.

关 键 词：溶液法 退火 IGZO 界面态 

分 类 号：TN304.55[电子电信—物理电子学]