He^(2+)注入六方SiC晶体损伤效应的拉曼光谱研究  

Raman Spectrosopy Study of Implantation Damage of He^(2+) Implanted Hexagonal SiC Crystals

作　　者：韩驿 彭金鑫[3] 李炳生[1] 王志光[1] 魏孔芳[1] 刘会平 张利民[3] HAN Yi;PENG Jin-xin;LI Bing-sheng;WANG Zhi-guang;WEI Kong-fang;LIU Hui-ping;ZHANG Li-min(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;University of Chinese Academy of Sciences,Beijing 100049,China;The School of Nuclear Science and Technology,Lanzhou University,Lanzhou 730000,China)

机构地区：[1]中国科学院近代物理研究所,兰州730000 [2]中国科学院大学,北京100049 [3]兰州大学核科学与技术学院,兰州730000

出　　处：《现代应用物理》2018年第3期45-50,共6页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11475229)

摘　　要：利用拉曼光谱研究了He^(2+)注入六方SiC晶体样品时的损伤缺陷随注量的变化关系,并采用直接碰撞/缺陷模拟模型与多级损伤累积模型,模拟了室温及723,873,1023K下晶体样品的无序度随注量的变化关系。测试结果表明:随着注量的增加,晶体样品无序度增大,样品的拉曼特征峰强度减小。Raman spectroscopy is used to study the relationship between the injection damage defect and the fluence of He 2＋ implanted hexagonal SiC crystals. Two models are used to simulate the relationship between the disorder of He 2＋ implanted hexagonal SiC crystals and the fluence at room temperature, 723 K, 873 K and 1 023 K. The results show that the disorder increases and the intensity of Raman charateristic peaks decreases with the increase of fluence.

关 键 词：碳化硅 离子注入 拉曼光谱 损伤累积 

分 类 号：TL627[核科学技术—核技术及应用]