一种提高掩模条宽(CD)性能方法的研究  

Study for Improvement in Mask Critical Dimension Performance

作　　者：刘维维 尤春 季书凤 胡超 LIU Weiwei;YOU Chun;JI Shufeng;HU Chao(Wuxi Zhongwei Mask Electronics Co.,Ltd.,Wuxi 214135,China)

机构地区：[1]无锡中微掩模电子有限公司,江苏无锡214135

出　　处：《电子与封装》2018年第9期42-44,48,共4页Electronics & Packaging

摘　　要：提出了一种提高相移掩模(PSM)条宽偏差(CD MTT,mean to target)精度的方法。在掩模制备过程中,条宽偏差的影响因素很多,基板材质、图形以及工艺过程均会对CD MTT产生影响。研究中提出了减小掩模工艺过程中CD MTT的方法,通过对相移层蚀刻前金属层CD进行测量,评估计算对金属层进行加蚀刻,实现对PSM掩模最终CD MTT的控制。同时确定了图形密度对CD MTT的影响,有效地提高了PSM掩模条宽性能。In this paper, the method for achieving precise CD MTT（critical dimension mean to target） of PSM（phase shift mask） was investigated. In the manufacturing process of PSM, there are several factors influencing the CD MTT results. Variation of blank material condition, variety of patterns and instability of patterning processallhave impacts on CD MTT. In order to correct CD MTT error, Cr CD after removing resist was measured before Mo Si N dry etching, and addition corrective Cr etching time based on Cr CD was applied to modify CD error. The relationship between CD shift and corrective Cr etching time for masks with various pattern densities was also studied. As a result, accurate CD control and significantmodification of CD MTT error for PSM was achieved byuse of the CD correction method investigated in the paper.

关 键 词：相移掩模 条宽偏差 条宽偏差控制 干法蚀刻 

分 类 号：TN305.7[电子电信—物理电子学]