4英寸高质量InSb晶体生长研究  

Study of 4 Inch High-quality InSb Crystal Growth

作　　者：柏伟[1] 庞新义 赵超[1] BAI Wei;PANG Xin-yi;ZHAO Chao(North China Research Institute of Electro optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2018年第9期8-13,共6页Infrared

摘　　要：InSb晶体是制备中波红外探测器的重要材料。为了满足新一代超大规模阵列红外焦平面探测器的发展需求,开展了大尺寸InSb晶体的生长研究,解决了晶体生长的诸多关键技术,成功地生长出了直径为4 in的高质量InSb单晶,并加工出了高质量的4 in InSb抛光晶片。测试表明,直径大于120 mm的晶体长度超过100 mm,晶体位错密度小于100 cm^(-2),其电学参数均匀,载流子浓度、载流子迁移率均满足制备高性能大规格红外焦平面探测器的要求。这为新一代超大规模阵列红外焦平面探测器的发展奠定了良好的材料基础。InSb crystal is an important material for medium wave infrared detector fabrication. To satisfy the development needs of a new generation of ultra large-scale array infrared focal plane detectors, the growth of large size InSb crystals is studied. The key technologies for large size crystal growth are solved, 4 inch high quality InSb single crystals are grown successfully and high quality 4 inch polished InSb wafers are fabricated. The test results show that the length of the crystal with a diameter greater than 120 mm is longer than 100 mm. The dislocation density of the crystal is less than 100 cm 2. Its electric parameters, carrier concentration and carrier mobility are conformed to the requirements for producing high performance large format infrared focal plane detectors. This lays a good material foundation for the development of a new generation of ultra- large-scale array infrared focal plane detectors.

关 键 词：锑化铟 晶体生长 直径 位错 电学参数 

分 类 号：TN213[电子电信—物理电子学]