2.0μm中红外量子阱激光器研制及其性能测试与分析  

Fabrication and performance test of 2.0μm mid-infrared quantum well lasers

作　　者：杨维凯 王海龙[1] 曹春芳[2] 严进一[2] 赵旭熠 周长帅 龚谦[2] YANG Wei-kai;WANG Hai-long;CAO Chun-fang;YAN Jin-yi;ZHAO Xu-yi;ZHOU Chang-shuai;GONG Qian(Shandong Provincial Key Laboratory of Laser Polarization and Information Technology,Department of Physics,QuFu Normal University,QuFu 273165,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]曲阜师范大学物理系山东省激光偏光与信息技术重点实验室,山东曲阜273165 [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《光电子．激光》2018年第9期933-937,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61674096);山东省自然科学基金(ZR2014FM011)资助项目

摘　　要：利用固态源分子束外延技术在GaSb衬底上生长InGaAsSb/AlGaAsSb量子阱激光器结构,研制了激射波长为2.0μm波段的GaSb基量子阱激光器。测量了激光器的阈值电流密度随激光器腔长的变化规律,得出无限腔长时器件的阈值电流密度为135A/cm^2,在室温连续波工作模式下,测得激光器的内量子效率为61.1%,内部损耗为8.3cm-1,激光输出功率斜效率为112mW/A,最高输出功率达到72mW,器件性能优异。另外,还研究了改变激光器的腔长和改变注入电流的条件下器件激射波长的调谐特性。器件激射波长随注入电流的红移速度为0.475nm/mA。对于不同腔长的器件,腔长越长,器件工作波长越长,工作波长和腔长之间呈单调关系。上述波长变化规律是GaSb量子阱激光器的典型特征。We have grown the InGaAsSb/AlGaAsSb quantum well laser structure on a GaSb substrate using solid-state source molecular beam epitaxy and successfully fabricated GaSb-bas ed laser diode operated at 2.0μm. The dependence of threshold current density on the cavity length was studied at room temperature in continuous-wave mode.It is found that the threshold current density is 135A/c m^2 when the device has infinite cavity length.The internal quantum efficiency is measured as 61.1% and int ernal loss is 8.3cm^-1,while the device is operating in the continuous wave mode at room temperature.The out pow er slope efficiency is 112mW/A and the maximum output optical power is 72mW.High device performances are obtained from the characterization data of the laser diodes.In addition,the tuning characteris tics of the lasing wavelength are studied by varying the cavity length and the i njection current of laser diodes.The operating wavelength shifts to longer direction with a rate of 0.475nm/mA with the increase of injection curre nt.The device with longer cavity length operates in longer wavelength.The laser wavelength depends monotonously on the cavity length.The above dependence is typical for GaSb based quantum well laser diodes in our studies.

关 键 词：分子束外延 阈值电流密度 量子阱 激射波长 

分 类 号：TN248.4[电子电信—物理电子学]