深亚微米SOIMOS器件研究与设计  

Study and design of deep-submicrometer FD SOIMOSFET

作　　者：颜志英[1] 张斌[1] 张敏霞[1] 

机构地区：[1]浙江工业大学信息学院,浙江杭州310032

出　　处：《浙江工业大学学报》2002年第4期348-351,共4页Journal of Zhejiang University of Technology

摘　　要：利用自己设计的适合深亚微米SOIMOS器件模型及SPICE电路模拟程序 ,详细分析了小尺寸SOI器件的阈值电压、饱和漏电流、电导、跨导等与工艺参数的关系 ,通过大量的模拟、计算 ,我们提出了小尺寸FDSOIMOSFET的设计方案 ,并根据该方案研制出性能优良的沟道长度为 0 2The threshold voltage, saturation current ,conductances versus channel length and silicon film thickness, Ids versus Vds curves of different W/L, and short channel effects are simulated using our SOIMOS model that has been transplanted in SPICE.Good agreement has been obtained between simulation results and measured data.According to our results,we put forward the design parameters of FD SOIMOSFET with channel length of 0.2μm for successful production.

关 键 词：SOIMOS器件 模拟 设计 深亚微米器件 

分 类 号：TN386[电子电信—物理电子学]