X波段400 W GaN内匹配功率管  

X-band 400W GaN Internally Matched Power Transistor

作　　者：唐世军[1] 顾黎明 陈韬[1] 彭劲松[1] TANG Shijun;GU Liming;CHEN Tao;PENG Jinsong(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2018年第4期235-238,250,共5页Research & Progress of SSE

摘　　要：报道了X波段脉冲输出功率超过400 W的GaN HEMT内匹配功率管。该器件内部包含了4只14.4mm栅宽GaN HEMT管芯。输入输出同时采用了一级L-C阻抗变换和两级微带阻抗变换器。该器件在9.0~10.0GHz频带内,在漏极电压为50V、脉冲宽度100μs、占空比10%测试条件下,输出功率达到了400 W以上,功率增益大于9dB,附加效率高于37.7%,带内峰值输出功率450 W。An X-band pulse-mode GaN HEMT power transistor with over 400 Woutput power was reported.Four GaN HMET dies of 14.4 mm gate width were included inside the transistor.One-stage L-C impedance transformer and two-stages micro-strip line impedance transformer were employed for input and output matching networks simultaneously.Under the drain voltage of 50 Vand the pulse condition（100μs pulse width,10% ratio）,during the operation frequency band of 9.0 GHz to 10.0 GHz,the output power is higher than 400 W,the power gain is more than 9 dB,the PAEis higher than 37.7%,and within the whole band,the highest output power is about 450 W.

关 键 词：氮化镓 高电子迁移率晶体管 内匹配功率管 X波段 

分 类 号：TN323.4[电子电信—物理电子学]