光刻胶流淌实现深亚微米栅工艺  

A Resist Reflow Process to Realize a Deep Submicron Gate

作　　者：朱赤[1] 王溯源 章军云[1] 林罡[1] 黄念宁[1] ZHU Chi;WANG Suyuan;ZHANG Junyun;LIN Gang;HUANG Nianning(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2018年第4期305-309,共5页Research & Progress of SSE

摘　　要：基于0.15μm分辨率扫描式光刻机实现0.1μm栅光刻的光刻胶流淌工艺。通过合理选择光刻胶烘烤温度、烘烤时间和圆片表面处理工艺,实现线宽均匀性好、工艺窗口满足要求的0.1μm线条。实验结果表明,圆片表面状态对光刻胶流淌工艺有重要影响。采用热流淌工艺形成的胶剖面在HEMT器件双层胶工艺中有重要应用,可实现极限分辨率的突破及栅剖面形貌的优化,有利于提升器件成品率和可靠性。The realization of 0.1μm gate lithography using resist reflow process on a 0.15μm resolution scanner was introduced.By optimizing the baking temperature,baking time of photo resist and wafer surface treatment process,acceptable critical dimension uniformity and process window were obtained for 0.1μm iso-space.The experiment results show that wafer surface state has an important influence on the resist reflow process.The profile formed by thermal reflow process has important applications in double layer resist lithography for HEMT device fabrication.Breakthrough of the resolution limit and optimized gate profile are realized,which are beneficial for the yield and reliability of the device.

关 键 词：分辨率 光刻胶流淌 特征尺寸 线宽收缩 表面状态 

分 类 号：TN305[电子电信—物理电子学]