FA/O阻挡层抛光液在铜布线平坦化中的应用  

Application of the FA/O Barrier Slurry on Cu Chemical Mechanical Planarization

作　　者：胡轶[1] 何彦刚[2] 刘玉岭[2] Hu Yi;He Yangang;Liu Yuling(School of Chemistry and Chemical Engineering,Xinjiang Normal University,Orumqi 830054,China;Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]新疆师范大学化学化工学院,乌鲁木齐830054 [2]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2018年第10期766-770,776,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2016ZX02301003-004-007);自治区高校科研计划青年教师科研启动金项目(XJEDU2016S064)

摘　　要：研发了一种FA/O阻挡层抛光液,主要成分包含硅溶胶、螯合剂和FA/O非离子型表面活性剂。使用该阻挡层抛光液进行了铜、阻挡层（Ta）和介质层（TEOS-SiO2）的去除速率选择性实验,实验表明,FA/O阻挡层抛光液对Cu的去除速率较低,对Ta和SiO2的去除速率较高,分别为4. 7,23. 5和45 nm/min。该FA/O阻挡层抛光液可有效抑制铜的去除速率,提高介质层的去除速率,可有效修正精抛过程中产生的正碟形坑和蚀坑。300 mm铜布线片抛光实验结果表明,其碟形坑深度不大于40 nm,蚀坑深度不大于30 nm。抛光后测试了介质层的电学特性,结果显示,电阻值为1. 49 kΩ,漏电流为pA级,满足300 mm铜布线工业化生产的要求。A kind of FA/O barrier slurry was researched and developed. The main components included silica sol,chelating agent and FA/O non-ionic surfactant. The removal rates of copper,barrier layer（ Ta） and dielectric layer（ TEOS-SiO2） were selectively tested using the FA/O barrier slurry. The experiments show that the removal rate of Cu is lower,and the removal rates of Ta and SiO2 are higher.The removal rates for Cu,barrier layer and dielectric layer are 4. 7,23. 5 and 45 nm/min,respectively.The FA/O barrier slurry could effectively inhibit the removal rate of Cu,and improve the removal rate of the dielectric layer. And the dishing and erosion could be eflectively corrected during the copper clearing stage. Finally,the FA/O barrier slurry was tested on 300 mm Cu pattern wafer. The results show that after the CMP process by the FA/O barrier slurry,the depth of the dishing is below 40 nm and the depth of the erosion is below 30 nm. The electrical properties of the dielectric material were tested. The results show that the resistance is 1. 49 kΩ and the current leakage is of pA scale,which meets the 300 mm Cu pattern wafer industrial production demands.

关 键 词：化学机械抛光(CMP) FA/O阻挡层抛光液 介质层电学性能 碟形坑 蚀坑 

分 类 号：TN305.2[电子电信—物理电子学]