区熔硅单晶中的漩涡缺陷及其影响因素  

Whirlpool Defects and Their Influence Factors in Fused Silicon Single Crystals

作　　者：邢友翠[1] 闫萍[1] 刘玉岭[1] 李万策 XING Youcui;YAN Ping;LIU Yuling;LI Wance(The 46thResearch Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2018年第5期50-54,共5页Equipment for Electronic Products Manufacturing

摘　　要：因生长时工艺条件的不同,区熔硅单晶中的微缺陷类型及分布会呈现出不同的变化。对单晶生长工艺中影响缺陷形成的相关因素进行了分析,并给出了不同工艺条件下单晶中漩涡缺陷的宏观分布状态以及所对应缺陷的微观形貌。单晶生长实验结果表明,除生长速率与晶体中的微缺陷变化具有明显的对应关系外,晶体生长界面附近的温度梯度、晶体直径以及晶体生长的气氛环境等因素也与晶体中的微缺陷直接相关。The types and distributions of micro-defects in zone-fused silicon crystals vary with the growth conditions. In this paper,the factors affecting the formation of defects in single crystal growth process are analyzed,and the macroscopic distribution of vortex defects in single crystal under different process conditions and the corresponding micro-morphology of defects are given. The experimental results of single crystal growth show that besides the obvious correlation between the growth rate and the change of micro-defects in the crystal,the temperature gradient near the crystal growth interface,crystal diameter and the atmosphere surrounding the crystal growth are also directly related to the micro-defects in the crystal.

关 键 词：区熔工艺 硅单晶 漩涡缺陷 

分 类 号：TN304.05[电子电信—物理电子学]