溅射气体流量比对磷掺杂ZnO电学性质的影响  

Effect of Sputtering Gas Flow Ratio on the Electrical Properties of Phosphor Doped ZnO

作　　者：解玉鹏[1] 王显德[1] 张楠楠[2] 蔚金 XIE Yu-peng;WANG Xian-de;ZHANG Nan-na;WEI Jin-liang(Jilin Institute of Chemical Technology,Jilin Jilin 132022;Jilin Anny Reserve,The Chinese People Jilin 132113;Haitong Securities Company Limited,Jilin Liaoyuan 136300)

机构地区：[1]吉林化工学院,吉林吉林132022 [2]中国人民解放军吉林陆军预备役某师,吉林吉林132113 [3]海通证券股份有限公司,吉林辽源136300

出　　处：《大学物理实验》2018年第5期75-78,共4页Physical Experiment of College

基　　金：吉林化工学院校级项目(2015053);吉林化工学院校级博士启动项目(2015129);吉林化工学院重大科技项目(2015011)

摘　　要：采用磁控溅射方法在石英衬底上制备ZnO薄膜,研究溅射气体流量比对薄膜性能的影响,利用XRD对薄膜结构进行表征,SEM表征薄膜的表面形貌,讨论了溅射气体流量比对薄膜电学性质的影响。结果表明,当Ar/O_2为1/0.05时,得到p型ZnO:P,其电阻率为59.80Ωcm,迁移率为0.49 cm^2/Vs,空穴载流子浓度为2.33×10^(17)cm^(-3)。ZnO films were prepared on quartz substrates by magnetron sputtering,the effect of sputtering gas flow ratio on the properties of films was studied,the film structure was characterized by XRD, and the surface morphology of the films was demonstrated by SEM, and the effect of the sputtering gas flow ratio on the electrical properties of the films was discussed.The results show that when the Ar/O2 is 1/0.05 ,p-type ZnO：P is obtained, the 2.33×10^17cm^-3.

关 键 词：磁控溅射 ZNO薄膜 P型 电学性质 

分 类 号：O4-047[理学—物理]