2.3-2.5GHz自偏置20W GaN功率放大器的设计与实现  

Design and Realisation of a Self-bias 2.3-2.5GHz 20W GaN Power Amplifier

作　　者：孙春妹[1] 王召义 刘伟 钟世昌[1] Sun Chunmei;Zhong Shichang;Wang Shaoyi(Nanjing Electronic Device Institude,210016,CFIN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子技术（上海）》2018年第10期78-80,共3页Electronic Technology

摘　　要：文章介绍了一种单电源S波段10W GaN内匹配功率放大器。器件基于3.6mm GaN HEMT管芯,采用内匹配技术对其进行输入输出匹配,利用单电源的自偏置结构给器件提供瞬态保护。放大器工作频率范围2.3GHz～2.5GHz,在32V漏电压、连续波测试条件下,输出功率大于20W,功率附加效率大于50%,最高点达到55%,功率增益大于16dB。A S-band internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20 W with the power gain of over 15 dB and power added efficiency over 50% at the condition of Vds=32 V,continuous wave from 2.3 GHz-2.5 GHz.

关 键 词：氮化镓 内匹配 单电源 S波段 

分 类 号：TN722.75[电子电信—电路与系统]