铜铟镓硒吸收层缺陷态对太阳能电池性能影响研究  

Effects of absorber's defects on the performance of CuInGaSe_2 solar cells

作　　者：陈良艳 赵乐 CHEN Liang-yan;ZHAO Le(School of Electrical and Electronic Engineering Wuhan Polytechnic University,Wuhan 430023,China)

机构地区：[1]武汉轻工大学电气与电子工程学院,湖北武汉430023

出　　处：《武汉轻工大学学报》2018年第5期28-33,共6页Journal of Wuhan Polytechnic University

基　　金：武汉轻工大学大学生科研项目(xsky2018057)

摘　　要：缺陷是影响材料性能进而影响器件的关键因素,铜铟镓硒吸收层是铜铟镓硒基太阳能电池核心层,结合他人实验验证铜铟镓硒缺陷类型,采用载流子扩散-漂移模型计算讨论电池吸收层中三种不同缺陷(一种施主缺陷和两种不同位置的受主缺陷)态密度对电池关键参数开路电压、短路电流、填充因子和转化效率的影响。结果表明:铜铟镓硒中缺陷的种类和位置对开路电压、短路电流、填充因子和转化效率四大参数的影响程度各不相同,缺陷存在总是降低电池的性能参数,但是当缺陷浓度低于1015cm-3时,对电池性能影响微乎其微。Defects are the key factors that affect the performance of the material and the device. Based on the diffusion drift model of carrier in copper indium gallium selenide solar cells, the key parameters are an alyzed. Combining with the experimental results of others, this paper discusses the absorbing layer＇s three different defects＇ （one donor like defect and two kinds of acceptor like defects） influence on the open cir cuit voltage, short circuit current, filling factor and conversion efficiency of the copper indium gallium se lenium based solar cells. The results show that the defects of the absorption layer always harm the per formance of the device, while the effect on the parameter varies from the type and position of the defects. Above all, when the defect concentration is below 1015 cm^3, the effect on the performance of the device is negligible.

关 键 词：缺陷密度 填充因子 转化效率 开路电压 短路电流 

分 类 号：O474[理学—半导体物理]