导带弯曲对有限深量子阱中激子态影响的研究  

Effect of band bending on exciton in a finite-barries quantum well

作　　者：张金凤 李腾 ZHANG Jinfeng;LI Teng(College of Information Engineering,Shandong Vocational College of Foreign Affairs Translation Weihai 264504,China;Information Management Office,Shandong Vocational College of Foreign Affairs Translation,Weihai 264504,China)

机构地区：[1]山东外事翻译职业学院信息工程学院,山东威海264504 [2]山东外事翻译职业学院信息化管理办公室,山东威海264504

出　　处：《量子电子学报》2018年第6期747-751,共5页Chinese Journal of Quantum Electronics

摘　　要：基于有效质量近似及变分法,考虑导带弯曲效应,用三角势近似量子阱中实际的导带弯曲势,讨论了Cd_(1-x)Mn_xTe/CdTe量子阱中激子的结合能、玻尔半径、非相关概率,并与方阱进行比较,给出了结合能随阱宽和锰组分的变化情况.结果表明,三角势近似下激子结合能随阱宽呈现先增加后减小的趋势,同方阱相似,但明显小于方阱,且两者的差别随阱宽和锰组份(势垒高度)而增加.在相关问题的研究中应考虑导带弯曲的修正.Based on effective mass approximation and variational method, the actual conduction band binding potential in quantum well is approximated by the triangular potential considering band bending effect. The binding energy, Bohr radius and non-correlation probability of excitons in Cd（1-x）MnxTe/CdTe quantum wells are discussed and compared with square wells. The change of binding energy with well width and Mn component is given. Results show that the exciton binding energy increases first and then decreases with well width under the triangular potential approximation, which is similar to square well, but obviously smaller than square well. The difference between them increases with the well width and Mn component （barrier height）. Correction of band bending should be considered in the research of related issues.

关 键 词：光电子学 变分法 导带弯曲 量子阱 激子 

分 类 号：O471.3[理学—半导体物理]